Support

Support Options

Submit a Support Ticket

 

Tags: Device Modeling

All Categories (1-20 of 31)

  1. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Publications | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  2. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Publications | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  3. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Publications | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  4. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Publications | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  5. Modeling Quantum Transport i Nanoscale Transistors

    28 Jun 2013 | Publications | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...

    http://nanohub.org/resources/18744

  6. Udoy Paul

    http://nanohub.org/members/68281

  7. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    http://nanohub.org/resources/13613

  8. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    http://nanohub.org/resources/13614

  9. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...

    http://nanohub.org/resources/13612

  10. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...

    http://nanohub.org/resources/13611

  11. Dhawal Dilip Mahajan

    http://nanohub.org/members/65429

  12. Silvaco Athena - Part 3

    09 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska

    This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

    http://nanohub.org/resources/11819

  13. Device Parameters Extraction Within Silvaco Simulation Software

    30 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska

    This set of slides explains the extract statements within SILVACO simulation software.

    http://nanohub.org/resources/11769

  14. 2011 NCN@Purdue Summer School: Electronics from the Bottom Up

    20 Jul 2011 | Workshops

    click on image for larger version Alumni Discussion Group: LinkedIn

    http://nanohub.org/resources/11699

  15. Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems

    20 Jul 2011 | Online Presentations | Contributor(s): J. L. Gray

    Modeling and simulation play an important role in designing and optimizing PV systems. This tutorial is a broad overview of the topic including a look at detailed, numerical device simulation.

    http://nanohub.org/resources/11690

  16. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10...

    http://nanohub.org/resources/11249

  17. Ahmad Ehteshamul Islam

    Ahmad Ehteshamul Islam is a Research Scientist at Soft Matter Materials Branch in Materials and Manufacturing Directorate of Air Force Research Laboratory, Dayton, Ohio. He obtained Ph.D. degree...

    http://nanohub.org/members/9615

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.