Tags: device physics

Online Presentations (61-80 of 85)

  1. ECE 606 Lecture 7: Intrinsic semiconductors and Concepts of Doping

    28 Sep 2012 | | Contributor(s):: Gerhard Klimeck

  2. ECE 606 Lecture 8: Density of States

    04 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Calculation of density of statesDensity of states for specific materialsCharacterization of Effective MassConclusions

  3. ECE 606 Lecture 8: Temperature Dependent Carrier Density Concepts of Recombination

    28 Sep 2012 | | Contributor(s):: Gerhard Klimeck

  4. ECE 606 Lecture 9: Fermi-Dirac Statistics

    04 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Rules of filling electronic statesDerivation of Fermi-Dirac Statistics: three techniquesIntrinsic carrier concentrationConclusion

  5. ECE 606 Lecture 9: Recombination Process and Rates

    28 Sep 2012 | | Contributor(s):: Gerhard Klimeck

  6. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    14 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 1 Introduction

    26 Nov 2008 | | Contributor(s):: Eric Pop

    Introduction to Solid State Electronic Devices

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias

    30 Oct 2009 | | Contributor(s):: Eric Pop

    Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 21: P-N Diode Breakdown

    04 Mar 2010 | | Contributor(s):: Eric Pop

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts

    03 Mar 2010 | | Contributor(s):: Eric Pop

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode

    03 Mar 2010 | | Contributor(s):: Eric Pop

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

    03 Mar 2010 | | Contributor(s):: Eric Pop

  13. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

    03 Mar 2010 | | Contributor(s):: Eric Pop

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

    03 Mar 2010 | | Contributor(s):: Eric Pop

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 2: Crystal Lattices

    14 Aug 2008 | | Contributor(s):: Eric Pop

    Crystal Lattices:Periodic arrangement of atomsRepeated unit cells (solid-state)Stuffing atoms into unit cellsDiamond (Si) and zinc blende (GaAs)crystal structuresCrystal planesCalculating densities

  16. Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Discussion of scaleReview of atomic structureIntroduction to energy band model

  17. Illinois ECE 440 Solid State Electronic Devices, Lecture 4: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Energy Bands and CarriersBand gaps (lattice and temperature dependence)Band curvatureCarrier effective mass

  18. Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States

    04 Dec 2008 | | Contributor(s):: Eric Pop, Umair Irfan

  19. Illinois ECE 440 Solid State Electronic Devices, Lecture 7: Temperature Dependence of Carrier Concentrations

    30 Dec 2008 | | Contributor(s):: Eric Pop

  20. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions