Tags: device physics

Resources (81-100 of 111)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  3. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

    07 Mar 2010 | | Contributor(s):: Eric Pop

  4. Illinois ECE 440 Solid State Electronic Devices, Lecture 2: Crystal Lattices

    14 Aug 2008 | | Contributor(s):: Eric Pop

    Crystal Lattices:Periodic arrangement of atomsRepeated unit cells (solid-state)Stuffing atoms into unit cellsDiamond (Si) and zinc blende (GaAs)crystal structuresCrystal planesCalculating densities

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Discussion of scaleReview of atomic structureIntroduction to energy band model

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 4: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Energy Bands and CarriersBand gaps (lattice and temperature dependence)Band curvatureCarrier effective mass

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States

    04 Dec 2008 | | Contributor(s):: Eric Pop, Umair Irfan

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 7: Temperature Dependence of Carrier Concentrations

    30 Dec 2008 | | Contributor(s):: Eric Pop

  9. Illinois ECE 440: Solid State Electronic Devices

    18 Aug 2008 | | Contributor(s):: Eric Pop

    The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic...

  10. Illinois ECE 440: Solid State Electronic Devices Homework Assignments (Fall 2009)

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    Homework assignments for the Fall 2009 teaching of Illinois ECE 440: Solid State Electronic Devices.

  11. Illinois Tools: Basic Bulk Silicon Transport Data at 300K

    27 Oct 2009 | | Contributor(s):: Kyeong-hyun Park, Mohamed Mohamed, Nahil Sobh, Fawad Hassan

    Calculations of doped bulk silicon transport data (new version release)

  12. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    26 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

  13. Intro to MOS-Capacitor Tool

    09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

  14. Landauer Approach to Thermoelectrics

    21 Jun 2013 | | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...

  15. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions

  16. Lecture 7: On Reliability and Randomness in Electronic Devices

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationPrinciples of reliability physicsClassification of Electronic ReliabilityStructure Defects in Electronic MaterialsConclusions

  17. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

  18. Lecture 9: Breakdown in Thick Dielectrics

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  19. Nanoscale MOSFETS: Physics, Simulation and Design

    27 Jun 2013 | | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

  20. Nanostructured Electronic Devices: Percolation and Reliability

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...