Tags: device physics

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  1. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on...

    http://nanohub.org/resources/7113

  2. What is the relation between the extrinsic debye length and inbuild depletion width in PN junction?

    Closed | Responses: 0

    How do we find relation between the debye length and the depletion width define by the built in potential of the PN junction?? How to view this intuitively ??

    http://nanohub.org/answers/question/783

  3. Why and how quantum effect comes into picture?? How the density of states are calculated in nanowire/nanotubes??

    Open | Responses: 1

    http://nanohub.org/answers/question/785

  4. Abhijith Prakash

    http://nanohub.org/members/35214

  5. Akash Paharia

    Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...

    http://nanohub.org/members/38550

  6. Aniruddha Konar

    http://nanohub.org/members/29740

  7. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  8. Colloquium on Graphene Physics and Devices

    22 Sep 2009 | Courses | Contributor(s): Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

    This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

    http://nanohub.org/resources/7180

  9. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  10. Deepanjan Datta

    EXPERTISEAdvanced Nano-device Modeling, Semiconductor, Spintronics Memory and Logic device Design, Density Functional Theory and Materials Modeling, Advanced Electronics, High Tech, Strategy,...

    http://nanohub.org/members/39071

  11. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  12. Dhawal Dilip Mahajan

    http://nanohub.org/members/65429

  13. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Papers | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...

    http://nanohub.org/resources/18767

  14. ECE 606 Lecture 10: Additional Information

    16 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Potential, field, and charge E-k diagram vs. band-diagram Basic concepts of donors and acceptors Conclusion R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on...

    http://nanohub.org/resources/5801

  15. ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations

    30 Sep 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15329

  16. ECE 606 Lecture 11: Equilibrium Statistics

    16 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Law of mass-action & intrinsic concentration Statistics of donors and acceptor levels Conclusion R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid...

    http://nanohub.org/resources/5803

  17. ECE 606 Lecture 11: Interface States Recombination/Carrier Transport

    10 Oct 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15330

  18. ECE 606 Lecture 12: Equilibrium Concentrations

    16 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Carrier concentration Temperature dependence of carrier concentration Multiple doping, co-doping, and heavy-doping Conclusion R. F. Pierret, "Advanced Semiconductor Fundamentals",...

    http://nanohub.org/resources/5805

  19. ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion

    10 Oct 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15394

  20. ECE 606 Lecture 13 : Solutions of the Continuity Equations - Analytical & Numerical

    12 Oct 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15423