Tags: device physics

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  1. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

  2. What is the relation between the extrinsic debye length and inbuild depletion width in PN junction?

    Closed | Responses: 0

    How do we find relation between the debye length and the depletion width define by the built in potential of the PN junction?? How to view this intuitively ??

    http://nanohub.org/answers/question/783

  3. Why and how quantum effect comes into picture?? How the density of states are calculated in nanowire/nanotubes??

    Open | Responses: 1

    http://nanohub.org/answers/question/785

  4. Abhijith Prakash

    http://nanohub.org/members/35214

  5. Akash Paharia

    Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...

    http://nanohub.org/members/38550

  6. Aniruddha Konar

    http://nanohub.org/members/29740

  7. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

  8. CM Kaushik

    http://nanohub.org/members/141571

  9. Colloquium on Graphene Physics and Devices

    22 Sep 2009 | | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

    This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

  10. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  11. Deepanjan Datta

    EXPERTISEAdvanced Nano-device Modeling, Semiconductor, Spintronics Memory and Logic device Design, Density Functional Theory and Materials Modeling, Advanced Electronics, High Tech, Strategy,...

    http://nanohub.org/members/39071

  12. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

  13. Dhawal Dilip Mahajan

    http://nanohub.org/members/65429

  14. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | | Contributor(s):: Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

  15. ECE 606 Lecture 10: Additional Information

    16 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Potential, field, and chargeE-k diagram vs. band-diagramBasic concepts of donors and acceptorsConclusion

  16. ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations

    30 Sep 2012 | | Contributor(s):: Gerhard Klimeck

  17. ECE 606 Lecture 11: Equilibrium Statistics

    16 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Law of mass-action & intrinsic concentration Statistics of donors and acceptor levelsConclusion

  18. ECE 606 Lecture 11: Interface States Recombination/Carrier Transport

    10 Oct 2012 | | Contributor(s):: Gerhard Klimeck

  19. ECE 606 Lecture 12: Equilibrium Concentrations

    16 Feb 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Carrier concentrationTemperature dependence of carrier concentrationMultiple doping, co-doping, and heavy-dopingConclusion

  20. ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion

    10 Oct 2012 | | Contributor(s):: Gerhard Klimeck