
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009   Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

What is the relation between the extrinsic debye length and inbuild depletion width in PN junction?
Closed  Responses: 0
How do we find relation between the debye length and the depletion width define by the built in potential of the PN junction??
How to view this intuitively ??
http://nanohub.org/answers/question/783

Why and how quantum effect comes into picture?? How the density of states are calculated in nanowire/nanotubes??
Open  Responses: 1
http://nanohub.org/answers/question/785

Abhijith Prakash
http://nanohub.org/members/35214

Akash Paharia
Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...
http://nanohub.org/members/38550

Aniruddha Konar
http://nanohub.org/members/29740

Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highk gate...

CM Kaushik
http://nanohub.org/members/141571

Colloquium on Graphene Physics and Devices
22 Sep 2009   Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013   Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

Deepanjan Datta
EXPERTISEAdvanced Nanodevice Modeling, Semiconductor, Spintronics Memory and Logic device Design, Density Functional Theory and Materials Modeling, Advanced Electronics, High Tech, Strategy,...
http://nanohub.org/members/39071

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
28 Jun 2013   Contributor(s):: Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can replace silicon (Si) in extremely scaled devices. The effect of low densityofstates of IIIV materials...

Dhawal Dilip Mahajan
http://nanohub.org/members/65429

Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013   Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collisiondominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

ECE 606 Lecture 10: Additional Information
16 Feb 2009   Contributor(s):: Muhammad A. Alam
Outline:Potential, field, and chargeEk diagram vs. banddiagramBasic concepts of donors and acceptorsConclusion

ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations
30 Sep 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 11: Equilibrium Statistics
16 Feb 2009   Contributor(s):: Muhammad A. Alam
Outline:Law of massaction & intrinsic concentration Statistics of donors and acceptor levelsConclusion

ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012   Contributor(s):: Gerhard Klimeck

ECE 606 Lecture 12: Equilibrium Concentrations
16 Feb 2009   Contributor(s):: Muhammad A. Alam
Outline:Carrier concentrationTemperature dependence of carrier concentrationMultiple doping, codoping, and heavydopingConclusion

ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion
10 Oct 2012   Contributor(s):: Gerhard Klimeck