
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009  Workshops  Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on...
http://nanohub.org/resources/7113

What is the relation between the extrinsic debye length and inbuild depletion width in PN junction?
Closed  Responses: 0
How do we find relation between the debye length and the depletion width define by the built in potential of the PN junction??
How to view this intuitively ??
http://nanohub.org/answers/question/783

Why and how quantum effect comes into picture?? How the density of states are calculated in nanowire/nanotubes??
Open  Responses: 1
http://nanohub.org/answers/question/785

Abhijith Prakash
http://nanohub.org/members/35214

Akash Paharia
Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...
http://nanohub.org/members/38550

Aniruddha Konar
http://nanohub.org/members/29740

Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013  Papers  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...
http://nanohub.org/resources/18742

Colloquium on Graphene Physics and Devices
22 Sep 2009  Courses  Contributor(s): Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
http://nanohub.org/resources/7180

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013  Papers  Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
http://nanohub.org/resources/18769

Deepanjan Datta
EXPERTISE
Advanced Nanodevice Modeling, Semiconductor, Spintronics Memory and Logic device Design, Density Functional Theory and Materials...
http://nanohub.org/members/39071

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
28 Jun 2013  Papers  Contributor(s): Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can...
http://nanohub.org/resources/18697

Dhawal Dilip Mahajan
http://nanohub.org/members/65429

Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013  Papers  Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collisiondominated transport equations used in current device simulators...
http://nanohub.org/resources/18767

ECE 606 Lecture 10: Additional Information
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
Potential, field, and charge
Ek diagram vs. banddiagram
Basic concepts of donors and acceptors
Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on...
http://nanohub.org/resources/5801

ECE 606 Lecture 10: Shockley, Reed, Hall and other Recombinations
30 Sep 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/15329

ECE 606 Lecture 11: Equilibrium Statistics
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
Law of massaction & intrinsic concentration
Statistics of donors and acceptor levels
Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid...
http://nanohub.org/resources/5803

ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/15330

ECE 606 Lecture 12: Equilibrium Concentrations
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
Carrier concentration
Temperature dependence of carrier concentration
Multiple doping, codoping, and heavydoping
Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals",...
http://nanohub.org/resources/5805

ECE 606 Lecture 12: High Field, Mobility, Hall Effect, Diffusion
10 Oct 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/15394

ECE 606 Lecture 13: Solutions of the Continuity Equations  Analytical & Numerical
12 Oct 2012  Online Presentations  Contributor(s): Gerhard Klimeck
http://nanohub.org/resources/15423