Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

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  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 12: Quasi-Fermi Levels; Photoconductivity

    05 Jan 2009 | | Contributor(s):: Eric Pop

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 10-11: Optical Absorption and Direct Recombination

    30 Sep 2009 | | Contributor(s):: Eric Pop

  3. Illinois ECE 440 Solid State Electronic Devices, Lectures 8 and 9: Drift Mobility

    02 Jan 2009 | | Contributor(s):: Eric Pop

    Carrier Mobility and DriftECE 440: Lectures 8-9Carrier Mobility and DriftLet’s recap the 5-6 major concepts so far: Memorize a few things, but recognize many.(why? semiconductors require lots of approximations)Why all the fuss about the abstract concept of EF?Consider (for example) joining an...

  4. Lecture 5: NEGF Simulation of Graphene Nanodevices

    21 Sep 2009 | | Contributor(s):: Supriyo Datta

  5. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    09 Jul 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

  6. Colloquium on Graphene Physics and Devices

    29 Jul 2009 | | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

    This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

  7. Lecture 1: Percolation and Reliability of Electronic Devices

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

  8. Nanostructured Electronic Devices: Percolation and Reliability

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...

  9. Katie M Smith

    http://nanohub.org/members/38245

  10. Self-Heating Effects in Nano-Scale Devices. What do we know so far ...

    08 Aug 2009 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick

    This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in...

  11. From Semi-Classical to Quantum Transport Modeling

    09 Aug 2009 | | Contributor(s):: Dragica Vasileska

    This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

  12. From Semi-Classical to Quantum Transport Modeling: Particle-Based Device Simulations

    09 Aug 2009 | | Contributor(s):: Dragica Vasileska

    This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

  13. From Semi-Classical to Quantum Transport Modeling: Quantum Corrections to Semiclassical Approaches

    09 Aug 2009 | | Contributor(s):: Dragica Vasileska

    This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

  14. From Semi-Classical to Quantum Transport Modeling: Quantum Transport - Recursive Green's function method, CBR approach and Atomistic

    09 Aug 2009 | | Contributor(s):: Dragica Vasileska

    This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

  15. Tutorial for PADRE Based Simulation Tools

    10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.

  16. Illinois ECE 440 Solid State Electronic Devices, Lecture 5, Part 2 : Doping, Carrier Concentrations

    03 Aug 2009 | | Contributor(s):: Eric Pop, Omar Sobh

  17. Illinois ECE 440 Solid State Electronic Devices, Lecture 5: Intrinsic Material, Doping, Carrier Concentrations

    03 Aug 2009 | | Contributor(s):: Eric Pop, Omar Sobh

  18. Jul 20 2009

    2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    Electronics from the Bottom Up seeks to bring a new perspective to engineering education -- one that is designed to help realize the opportunities of nanotechnology. Ever since the birth of...

    http://nanohub.org/events/details/231

  19. MOSCAP: Theoretical Exercise - High Frequency CV Curves

    30 Jun 2009 | | Contributor(s):: Dragica Vasileska

    One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.

  20. BJT Lab: h-Parameters Calculation Exercise

    30 Jun 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...