Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Online Presentations (101-120 of 256)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 19: Current Flow in P-N Diode

    28 Oct 2009 | | Contributor(s):: Eric Pop

    Last time, we talked about unbiased p-n junction.Today: biased (Vext ≠ 0) p-n junction & current flow

  2. Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Introduction: definitions and review
Reaction diffusion in fractal volumesCarrier transport in BH solar cellsAll phase transitions are not fractalConclusions

  3. Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background: A different type of transport problem
Example: Classical biosensorsFractal dimension and cantor transformExample: fractal nanobiosensors Conclusions
Appendix: Transparent Electrodes and Antenna

  4. Illinois ECE 440 Solid State Electronic Devices, Lecture 18: P-N Diode Electrostatics

    22 Oct 2009 | | Contributor(s):: Eric Pop

    Last time, we talked about p-n junction built-in voltage V¬0.Today: more about p-n electrostatics.

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 16-17: Diffusion

    22 Oct 2009 | | Contributor(s):: Eric Pop

    So far:•Energy bands, Doping, Fermi levels•Drift (~n*v), diffusion (~dn/dx)•Einstein relationship (D/μ = kT/q)•“Boring” semiconductor resistors (either n- or p-type)•Majority/minority carriers with illuminationToday, our first “useful” device:•The P-N junction diode in equilibrium (external...

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 14-15: Diffusion with Recombination

    08 Oct 2009 | | Contributor(s):: Eric Pop

    •Diffusion with recombination•The diffusion length (distance until they recombine)

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 13: Diffusion

    02 Oct 2009 | | Contributor(s):: Eric Pop

    ECE 440: Lecture 13Diffusion Current

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 12: Quasi-Fermi Levels; Photoconductivity

    05 Jan 2009 | | Contributor(s):: Eric Pop

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 10-11: Optical Absorption and Direct Recombination

    30 Sep 2009 | | Contributor(s):: Eric Pop

  10. Illinois ECE 440 Solid State Electronic Devices, Lectures 8 and 9: Drift Mobility

    02 Jan 2009 | | Contributor(s):: Eric Pop

    Carrier Mobility and DriftECE 440: Lectures 8-9Carrier Mobility and DriftLet’s recap the 5-6 major concepts so far: Memorize a few things, but recognize many.(why? semiconductors require lots of approximations)Why all the fuss about the abstract concept of EF?Consider (for example) joining an...

  11. Lecture 5: NEGF Simulation of Graphene Nanodevices

    21 Sep 2009 | | Contributor(s):: Supriyo Datta

  12. Lecture 1: Percolation and Reliability of Electronic Devices

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

  13. Illinois ECE 440 Solid State Electronic Devices, Lecture 5: Intrinsic Material, Doping, Carrier Concentrations

    03 Aug 2009 | | Contributor(s):: Eric Pop, Omar Sobh

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 5, Part 2 : Doping, Carrier Concentrations

    03 Aug 2009 | | Contributor(s):: Eric Pop, Omar Sobh

  15. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 | | Contributor(s)::

  16. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  17. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  18. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  19. ECE 606 Lecture 39: Reliability of MOSFET

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  20. ECE 606 Lecture 33: MOS Electrostatics II

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam