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On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.
Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics,
molecular conduction, and other nanotechnologies.
Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.
Nano-Scale Device Simulations Using PROPHET-Part I: Basics
5.0 out of 5 stars
22 Jan 2006 | Online Presentations | Contributor(s): Yang Liu, Robert Dutton
Part I covers the basics of PROPHET,
including the set-up of simulation structures and parameters based on
pre-defined PDE systems.
Nano-Scale Device Simulations Using PROPHET
These two lectures are aimed to give a practical guide to the use of a
general device simulator
(PROPHET) available on nanoHUB. PROPHET
is a partial differential equation (PDE) solver that...
Optimization of Transistor Design for Carbon Nanotubes
21 Jan 2006 | Online Presentations | Contributor(s): Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs.
Using the simulator, we show that a recently reported high-performance
CNTFET delivers a near ballistic on-current. The...
Quantum Corrections for Monte Carlo Simulation
05 Jan 2006 | Online Presentations | Contributor(s): Umberto Ravaioli
Size quantization is an important effect in modern scaled devices. Due to the cost and limitations of available full quantum approaches, it is appealing to extend semi-classical simulators by...
Designing Nanocomposite Materials for Solid-State Energy Conversion
0.0 out of 5 stars
28 Dec 2005 | Online Presentations | Contributor(s): Timothy D. Sands
New materials will be necessary to break through today's performance envelopes for
solid-state energy conversion devices ranging from LED-based solid-state white lamps to
Atomic Force Microscopy
4.0 out of 5 stars
29 Nov 2005 | Online Presentations | Contributor(s): Arvind Raman
Atomic Force Microscopy (AFM) is an indispensible tool in nano science for the fabrication, metrology, manipulation, and property characterization of nanostructures. This tutorial reviews some of...
First Principles-based Atomistic and Mesoscale Modeling of Materials
16 Nov 2005 | Online Presentations | Contributor(s): Alejandro Strachan
This tutorial will describe some of the most powerful and widely used techniques for materials modeling including i) first principles quantum mechanics (QM), ii) large-scale molecular dynamics...
Designing Nanocomposite Thermoelectric Materials
08 Nov 2005 | Online Presentations | Contributor(s): Timothy D. Sands
This tutorial reviews recent strategies for designing high-ZT nanostructured materials, including superlattices, embedded quantum dots, and nanowire composites. The tutorial highlights the...
Bandstructure in Nanoelectronics
01 Nov 2005 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material...
An Electrical Engineering Perspective on Molecular Electronics
26 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than...
Wireless Integrated MicroSystems (WIMS): Coming Revolution in the Gathering of Information
25 Oct 2005 | Online Presentations | Contributor(s): Kensall D. Wise
Wireless integrated microsystems promise to become pervasive during the coming decade in applications ranging from health care and environmental monitoring to homeland security. Merging low-power...
Simple Theory of the Ballistic MOSFET
19 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we
still analyze, design, and think about MOSFETs in more or less in the
same way that we did 30 years ago. In this talk, I...
Laser Cooling of Solids
13 Oct 2005 | Online Presentations | Contributor(s): Massoud Kaviany
Enhanced laser cooling of ion doped nanocrystalline powders (e.g., Yb3+: Y2O3) can be achieved by enhancing the anti-Stokes, off-resonance absorption, which is proportional to the three...
Semiconductor Interfaces at the Nanoscale
4.5 out of 5 stars
13 Oct 2005 | Online Presentations | Contributor(s): David Janes
The trend in downscaling of electronic devices and the need to add functionalities such as sensing and nonvolatile memory to existing circuitry dictate that new approaches be developed for device...
Plasmonic Nanophotonics: Coupling Light to Nanostructure via Plasmons
04 Oct 2005 | Online Presentations | Contributor(s): Vladimir M. Shalaev
The photon is the ultimate unit of information because it packages data in a signal of zero mass and has unmatched speed. The power of light is driving the photonicrevolution, and information...
On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
03 Oct 2005 | Online Presentations | Contributor(s): Muhammad A. Alam
In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with...
Modeling and Simulation of Sub-Micron Thermal Transport
27 Sep 2005 | Online Presentations | Contributor(s): Jayathi Murthy
In recent years, there has been increasing interest in understanding thermal phenomena at the sub-micron scale. Applications include the thermal performance of microelectronic devices,...
26 Sep 2005 | Online Presentations | Contributor(s): Gerhard Klimeck
Quantum Dots are man-made artificial atoms that confine electrons to a small space. As such, they have atomic-like behavior and enable the study of quantum mechanical effects on a length scale...
Parallel Computing for Realistic Nanoelectronic Simulations
Typical modeling and simulation efforts directed towards the understanding of electron transport at the nanometer scale utilize single workstations as computational engines. Growing understanding...
Towards Molecular Electronic Circuitry: Selective Deposition of Metals on Patterned ...
01 Sep 2005 | Online Presentations | Contributor(s): Amy Walker
We have developed a robust method by which to construct complex two- and three- dimensional structures based on controlling interfacial chemistry. This work has important applications in...