Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Online Presentations (101-120 of 249)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 12: Quasi-Fermi Levels; Photoconductivity

    30 Sep 2009 | Online Presentations | Contributor(s): Eric Pop

    University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    http://nanohub.org/resources/6104

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 10-11: Optical Absorption and Direct Recombination

    30 Sep 2009 | Online Presentations | Contributor(s): Eric Pop

    University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    http://nanohub.org/resources/7483

  3. Illinois ECE 440 Solid State Electronic Devices, Lectures 8 and 9: Drift Mobility

    30 Sep 2009 | Online Presentations | Contributor(s): Eric Pop

    Carrier Mobility and Drift ECE 440: Lectures 8-9 Carrier Mobility and Drift Let’s recap the 5-6 major concepts so far: Memorize a few things, but recognize many. (why? semiconductors...

    http://nanohub.org/resources/6094

  4. Lecture 5: NEGF Simulation of Graphene Nanodevices

    23 Sep 2009 | Online Presentations | Contributor(s): Supriyo Datta

    Network for Computational Nanotechnology, Intel Foundation

    http://nanohub.org/resources/7422

  5. Lecture 1: Percolation and Reliability of Electronic Devices

    17 Sep 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Network for Computational Nanotechnology, Intel Foundation

    http://nanohub.org/resources/7169

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 5: Intrinsic Material, Doping, Carrier Concentrations

    03 Aug 2009 | Online Presentations | Contributor(s): Eric Pop, Omar Sobh

    University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    http://nanohub.org/resources/7197

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 5, Part 2 : Doping, Carrier Concentrations

    03 Aug 2009 | Online Presentations | Contributor(s): Eric Pop, Omar Sobh

    University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    http://nanohub.org/resources/7199

  8. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 | Online Presentations

    http://nanohub.org/resources/6716

  9. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5826

  10. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5902

  11. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5904

  12. ECE 606 Lecture 39: Reliability of MOSFET

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5908

  13. ECE 606 Lecture 33: MOS Electrostatics II

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5896

  14. ECE 606 Lecture 34: MOSCAP Frequency Response

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5898

  15. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5900

  16. ECE 606 Lecture 30: Heterojunction Bipolar Transistors I

    04 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5890

  17. ECE 606 Lecture 31: Heterojunction Bipolar Transistors II

    04 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5892

  18. ECE 606 Lecture 29: BJT Design II

    31 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5836

  19. ECE 606 Lecture 19: Numerical Solution of Transport Equation

    29 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Basic Transport Equations Gridding and finite differences Discretizing equations and boundary conditions Conclusion Lundstrom, Mark, A Primer on Semiconductor Device Simulation,...

    http://nanohub.org/resources/5819

  20. ECE 606 Lecture 28: BJT Design I

    29 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5834