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Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Online Presentations (81-100 of 238)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias

    This resource has a 6.8 Ranking

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    18 Nov 2009 | Online Presentations | Contributor(s): Eric Pop

    Recap diode (forward, zero, reverse) bias diagrams. Recap some of the equations. University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/7690

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 19: Current Flow in P-N Diode

    This resource has a 5.9 Ranking

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    28 Oct 2009 | Online Presentations | Contributor(s): Eric Pop

    Last time, we talked about unbiased p-n junction. Today: biased (Vext ≠ 0) p-n junction & current flow University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/7677

  3. Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells

    This resource has a 6.8 Ranking

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    27 Oct 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Introduction: 

definitions
 and
 review
 Reaction
 diffusion
 in 
fractal 
volumes Carrier
 transport
 in 
BH
 solar 
cells All
 phase
 transitions …

    https://nanohub.org/resources/7174

  4. Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae

    This resource has a 7.1 Ranking

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    27 Oct 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Background:
 A
 different
 type
 of
 transport
 problem
 Example:
 Classical
 biosensors Fractal 
dimension
 and
 cantor
 transform Example:
 fractal …

    https://nanohub.org/resources/7173

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 18: P-N Diode Electrostatics

    This resource has a 5.9 Ranking

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    22 Oct 2009 | Online Presentations | Contributor(s): Eric Pop

    Last time, we talked about p-n junction built-in voltage V¬0. Today: more about p-n electrostatics. University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/7612

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 16-17: Diffusion

    This resource has a 5.8 Ranking

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    22 Oct 2009 | Online Presentations | Contributor(s): Eric Pop

    So far: • Energy bands, Doping, Fermi levels • Drift (~n*v), diffusion (~dn/dx) • Einstein relationship (D/μ = kT/q) • “Boring” semiconductor resistors (either n- or p-type) • …

    https://nanohub.org/resources/7605

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 14-15: Diffusion with Recombination

    This resource has a 6.0 Ranking

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    08 Oct 2009 | Online Presentations | Contributor(s): Eric Pop

    • Diffusion with recombination • The diffusion length (distance until they recombine) University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/7553

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 13: Diffusion

    This resource has a 6.1 Ranking

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    02 Oct 2009 | Online Presentations | Contributor(s): Eric Pop

    ECE 440: Lecture 13 Diffusion Current University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/7502

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 12: Quasi-Fermi Levels; Photoconductivity

    This resource has a 6.0 Ranking

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    05 Jan 2009 | Online Presentations | Contributor(s): Eric Pop

    University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/6104

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 10-11: Optical Absorption and Direct Recombination

    This resource has a 6.0 Ranking

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    30 Sep 2009 | Online Presentations | Contributor(s): Eric Pop

    University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/7483

  11. Illinois ECE 440 Solid State Electronic Devices, Lectures 8 and 9: Drift Mobility

    This resource has a 6.2 Ranking

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    02 Jan 2009 | Online Presentations | Contributor(s): Eric Pop

    Carrier Mobility and Drift ECE 440: Lectures 8-9 Carrier Mobility and Drift Let’s recap the 5-6 major concepts so far: Memorize a few things, but recognize many. (why? semiconductors …

    https://nanohub.org/resources/6094

  12. Lecture 5: NEGF Simulation of Graphene Nanodevices

    This resource has a 9.9 Ranking

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    21 Sep 2009 | Online Presentations | Contributor(s): Supriyo Datta

    Network for Computational Nanotechnology, Intel Foundation

    https://nanohub.org/resources/7422

  13. Lecture 1: Percolation and Reliability of Electronic Devices

    This resource has a 8.4 Ranking

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    29 Jul 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Network for Computational Nanotechnology, Intel Foundation

    https://nanohub.org/resources/7169

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 5: Intrinsic Material, Doping, Carrier Concentrations

    This resource has a 6.6 Ranking

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    03 Aug 2009 | Online Presentations | Contributor(s): Eric Pop, Omar Sobh

    University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/7197

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 5, Part 2 : Doping, Carrier Concentrations

    This resource has a 6.5 Ranking

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    03 Aug 2009 | Online Presentations | Contributor(s): Eric Pop, Omar Sobh

    University of Illinois at Urbana-Champaign ECE 440: Solid State Electronic Devices

    https://nanohub.org/resources/7199

  16. ECE 606 Lecture 40: Looking Back and Looking Forward

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    30 Apr 2009 | Online Presentations

    https://nanohub.org/resources/6716

  17. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    This resource has a 9.3 Ranking

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5826

  18. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    This resource has a 9.1 Ranking

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5902

  19. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    This resource has a 9.0 Ranking

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5904

  20. ECE 606 Lecture 39: Reliability of MOSFET

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    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/5908

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