Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Online Presentations (81-100 of 259)

  1. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    10 Mar 2010 | | Contributor(s):: Muhammad A. Alam

  2. Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions

    09 Mar 2010 | | Contributor(s):: Gerhard Klimeck

    One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The new boundary conditions are based on the partitioning of the device into emitter and collector...

  3. Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts

    07 Mar 2010 | | Contributor(s):: Eric Pop

  4. Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode

    07 Mar 2010 | | Contributor(s):: Eric Pop

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

    07 Mar 2010 | | Contributor(s):: Eric Pop

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 21: P-N Diode Breakdown

    07 Mar 2010 | | Contributor(s):: Eric Pop

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

    02 Mar 2010 | | Contributor(s):: Eric Pop

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

    02 Mar 2010 | | Contributor(s):: Eric Pop

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

    02 Mar 2010 | | Contributor(s):: Eric Pop

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

    02 Mar 2010 | | Contributor(s):: Eric Pop

  13. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

    02 Mar 2010 | | Contributor(s):: Eric Pop

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    02 Mar 2010 | | Contributor(s):: Eric Pop

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 28&29: All Modes of BJT Operation

    02 Mar 2010 | | Contributor(s):: Eric Pop

  16. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    02 Feb 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions

  17. Illinois ME 498 Introduction of Nano Science and Technology, Lecture 25: Nanomaterials and Devices for Solar Energy

    29 Dec 2009 | | Contributor(s):: Nick Fang, Omar N Sobh

    Nanomaterials and Devices for Solar EnergyTopics: Approaches: Breathing Membrane Continuous Operation Fuel Cell Water Management ElectroKinetic Nanobattery EDL Capacitators Laminar Flow Based Micro Fuel Cells The Energy in Sunlight Solar Energy Utilization Discovery of photovoltaic effect...

  18. Illinois ME 498 Introduction of Nano Science and Technology, Lecture 23: Nanomaterials and Devices for Energy Conversion I

    28 Dec 2009 | | Contributor(s):: Nick Fang, Omar N Sobh

    Nanomaterials and Devices for Energy ConversionTopics: Overview of Actuators at Nanoscale Electrostatic Actuators Piezo-Actuators Surface Acoustic Wave Motors Actuator Selection Electrochemical Actuators Solid State Electrochemical Actuator Electrochemical nano-actuator Electrochemical conversion...

  19. Illinois ME 498 Introduction of Nano Science and Technology, Lecture 24: Nanomaterials and Devices for Energy Conversion II

    28 Dec 2009 | | Contributor(s):: Nick Fang, Omar N Sobh

    Nanomaterials and Devices for Energy Conversion IITopics: Electrochemistry - Energy Storage Non-linear Diffusion Effect in Electrochemistry Architecture of 3-D batteries Nanomaterials for Energy Storage Solutions for Reversibility Nano-wire Lithium Ion Batteries Nano-wire Solar Cells Micro Nano...

  20. Molecular Sensors for MEMS

    10 Dec 2009 | | Contributor(s):: John P. Sullivan

    This seminar will cover the issues involved in using molecular sensors in MEMS and their application to microchannels, supersonic micronozzles, microjet impingement, microturbines and unsteady fluidic actuators.