Please help us continue to improve nanoHUB operation and service by completing our survey - http://bit.ly/nH-survey14. Thank you - we appreciate your time. close

Support

Support Options

Submit a Support Ticket

 

Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Resources (61-80 of 298)

  1. Keithley 4200-SCS Lecture 08: 4210 CVU Instrument Module - Overview

    20 Jan 2011 | Online Presentations | Contributor(s): Lee Stauffer

    Theory of Operation and Measurement Overview

    http://nanohub.org/resources/10431

  2. Keithley 4200-SCS Lecture 09: 4210 CVU Instrument Module - Measurement Techniques I

    20 Jan 2011 | Online Presentations | Contributor(s): Lee Stauffer

    Measurement Techniques and Optimization

    http://nanohub.org/resources/10432

  3. Keithley 4200-SCS Lecture 10: 4210 CVU Instrument Module - Measurement Techniques II

    20 Jan 2011 | Online Presentations | Contributor(s): Lee Stauffer

    Measurement Techniques and Optimization

    http://nanohub.org/resources/10433

  4. Keithley 4200-SCS Lecture 11: 4210 CVU Instrument Module - Troubleshooting

    20 Jan 2011 | Online Presentations | Contributor(s): Lee Stauffer

    http://nanohub.org/resources/10480

  5. Device Characterization with the Keithley 4200-SCS

    20 Jan 2011 | Courses | Contributor(s): Lee Stauffer

    This training session is based on the Keithley 4200-SCS Semiconductor Characterization System. It is intended for beginning to intermediate users. It covers basic concepts, both of the instrument,...

    http://nanohub.org/resources/10386

  6. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...

    http://nanohub.org/resources/10199

  7. Chemically Enhanced Carbon-Based Nanomaterials and Devices

    09 Nov 2010 | Online Presentations | Contributor(s): Mark Hersam

    Carbon-based nanomaterials have attracted significant attention due to their potential to enable and/or improve applications such as transistors, transparent conductors, solar cells, batteries,...

    http://nanohub.org/resources/9929

  8. Nanoelectronic Devices, With an Introduction to Spintronics

    09 Sep 2010 | Courses | Contributor(s): Supriyo Datta, Mark Lundstrom

        Nanoelectronic devices are at the heart of today's powerful computers and are also of great interest for many emerging applications including...

    http://nanohub.org/resources/9363

  9. Discussion Session 2 (Lectures 3 and 4)

    08 Sep 2010 | Online Presentations | Contributor(s): Supriyo Datta

    “Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the...

    http://nanohub.org/resources/9664

  10. Lecture 3: Introduction to NEGF

    08 Sep 2010 | Online Presentations | Contributor(s): Supriyo Datta

    “Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the...

    http://nanohub.org/resources/9659

  11. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D...

    http://nanohub.org/resources/9283

  12. Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors

    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such...

    http://nanohub.org/resources/9282

  13. Lecture 1b: Nanotransistors - A Bottom Up View

    20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for...

    http://nanohub.org/resources/9344

  14. Drift-Diffusion Modeling and Numerical Implementation Details

    01 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result...

    http://nanohub.org/resources/9092

  15. Lecture 7: On Reliability and Randomness in Electronic Devices

    14 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Background
 information Principles
 of 
reliability
 physics Classification
 of 
Electronic
 Reliability Structure 
Defects
 in
 Electronic
 Materials Conclusions

    http://nanohub.org/resources/7175

  16. Lecture 9: Breakdown in Thick Dielectrics

    05 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Breakdown in gas dielectric and Paschen’s law Spatial and temporal dynamics during breakdown Breakdown in bulk oxides: puzzle Theory of pre-existing defects: Thin oxides Theory of...

    http://nanohub.org/resources/7177

  17. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    10 Mar 2010 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/7176

  18. Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions

    09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The...

    http://nanohub.org/resources/8592

  19. Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts

    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8615

  20. Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode

    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8618

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.