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Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Resources (81-100 of 298)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8621

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8624

  3. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8627

  4. Illinois ECE 440 Solid State Electronic Devices, Lecture 21: P-N Diode Breakdown

    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8630

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8553

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8557

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8561

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8564

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8573

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8576

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 28&29: All Modes of BJT Operation

    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    http://nanohub.org/resources/8582

  12. Illinois ABE 446: Biological Nanoengineering

    11 Feb 2010 | Courses | Contributor(s): Kaustubh Bhalerao

    Nanodevice design through organization of functional biological components; bio-molecular function and bioconjugation techniques in nanotechnology; modulation of biological systems using...

    http://nanohub.org/resources/8306

  13. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    02 Feb 2010 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Background information NBTI interpreted by R-D model The act of measurement and observed quantity NBTI vs. Light-induced Degradation Possibility of Degradation-free...

    http://nanohub.org/resources/7178

  14. Illinois ECE 440: Introduction to Crystal Properties Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework Assignment covers basic introduction to Material Properties and Crystal Structures.

    http://nanohub.org/resources/8243

  15. Illinois ECE 440: Charge Carrier in Bulk Semiconductors Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers the effects of doping on carrier concentration in bulk silicon.

    http://nanohub.org/resources/8247

  16. Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers Carrier Transport in Semiconductors subjected to an electric field.

    http://nanohub.org/resources/8249

  17. Illinois ECE 440: Diffusion and Energy Band Diagram Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers Diffusion of Carriers, Built-in Fields and Metal semiconductor junctions.

    http://nanohub.org/resources/8264

  18. Illinois ECE 440: MOS Capacitor Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.

    http://nanohub.org/resources/8266

  19. Illinois ECE 440: MOS Field-Effect Transistor Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

    http://nanohub.org/resources/8268

  20. Illinois ECE 440: Carrier Generation and Recombination and photo-conductivity Homework

    28 Jan 2010 | Teaching Materials | Contributor(s): Mohamed Mohamed

    This homework covers Optical Absorption, Excess Carrier Concentration, Steady State Carrier Generation, and Quasi-Fermi Levels.

    http://nanohub.org/resources/8270

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