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On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Resources (61-80 of 289)

  1. Lecture 3: Thermoelectricity: Energy from heat

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    08 Sep 2010 | Online Presentations | Contributor(s): Supriyo Datta

    “Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the …

    https://nanohub.org/resources/9659

  2. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

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    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D …

    https://nanohub.org/resources/9283

  3. Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors

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    05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

    This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex …

    https://nanohub.org/resources/9282

  4. Lecture 1b: Nanotransistors - A Bottom Up View

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    20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for …

    https://nanohub.org/resources/9344

  5. Drift-Diffusion Modeling and Numerical Implementation Details

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    01 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from …

    https://nanohub.org/resources/9092

  6. Lecture 7: On Reliability and Randomness in Electronic Devices

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    14 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Background
 information Principles
 of 
reliability
 physics Classification
 of 
Electronic
 Reliability Structure 
Defects
 in
 Electronic
 Materials Conclusions

    https://nanohub.org/resources/7175

  7. Lecture 9: Breakdown in Thick Dielectrics

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    05 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Breakdown in gas dielectric and Paschen’s law Spatial and temporal dynamics during breakdown Breakdown in bulk oxides: puzzle Theory of pre-existing defects: Thin oxides Theory of …

    https://nanohub.org/resources/7177

  8. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

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    10 Mar 2010 | Online Presentations | Contributor(s): Muhammad A. Alam

    https://nanohub.org/resources/7176

  9. Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions

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    09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck

    One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The new …

    https://nanohub.org/resources/8592

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts

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    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    https://nanohub.org/resources/8615

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode

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    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    https://nanohub.org/resources/8618

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

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    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    https://nanohub.org/resources/8621

  13. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

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    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    https://nanohub.org/resources/8624

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

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    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8627

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 21: P-N Diode Breakdown

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    07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

    …

    https://nanohub.org/resources/8630

  16. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8553

  17. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8557

  18. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8561

  19. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8564

  20. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

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    02 Mar 2010 | Online Presentations | Contributor(s): Eric Pop

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    https://nanohub.org/resources/8573

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