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Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Resources (141-160 of 298)

  1. Piece-Wise Constant Potential Barriers Tool: First-Time User Guide

    01 Jun 2009 | Teaching Materials | Contributor(s): Samarth Agarwal, Gerhard Klimeck

    This supporting document for the Piece-Wise Constant Potential Barriers Tool serves as a first-time user guide. Some basic ideas about quantum mechanical tunneling are introduced in addition to...

    http://nanohub.org/resources/6794

  2. ECE 606 Lecture 40: Looking Back and Looking Forward

    30 Apr 2009 | Online Presentations

    http://nanohub.org/resources/6716

  3. ECE 606 Lecture 37b: Nonideal Effects in MOSFET II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5826

  4. ECE 606 Lecture 36: MOSFET I-V Characteristics II

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5902

  5. ECE 606 Lecture 37a: Nonideal Effects in MOSFET I

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5904

  6. ECE 606 Lecture 39: Reliability of MOSFET

    28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5908

  7. ECE 606 Lecture 33: MOS Electrostatics II

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5896

  8. ECE 606 Lecture 34: MOSCAP Frequency Response

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5898

  9. ECE 606 Lecture 35: MOSFET I-V Characteristics I

    16 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5900

  10. ECE 606 Lecture 30: Heterojunction Bipolar Transistors I

    04 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5890

  11. ECE 606 Lecture 31: Heterojunction Bipolar Transistors II

    04 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5892

  12. ECE 606 Lecture 29: BJT Design II

    31 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5836

  13. ECE 606 Lecture 19: Numerical Solution of Transport Equation

    29 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Basic Transport Equations Gridding and finite differences Discretizing equations and boundary conditions Conclusion Lundstrom, Mark, A Primer on Semiconductor Device Simulation,...

    http://nanohub.org/resources/5819

  14. ECE 606 Lecture 28: BJT Design I

    29 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5834

  15. ECE 606 Lecture 27: Introduction to Bipolar Transistors

    29 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5832

  16. ECE 606 Lecture 25: Schottky Diode I

    24 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5828

  17. ECE 606 Lecture 18: Continuity Equations

    24 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline Continuity Equation Example problems Conclusion R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, Addison-Wesley, 1987,...

    http://nanohub.org/resources/5817

  18. ECE 606 Lecture 24: Large Signal Response

    13 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/6498

  19. ECE 606 Lecture 23: AC Response

    13 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/6493

  20. ECE 606 Lecture 20: Electrostatics of P-N Junction Diodes

    11 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5820

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.