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Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Resources (221-240 of 298)

  1. Solid-State Lighting: An Opportunity for Nanotechnologists to Address the Energy Challenge

    25 Apr 2007 | Online Presentations | Contributor(s): Timothy D. Sands

    More than one-fifth of the electrical power consumed in the U.S. is used for general illumination. Much of this energy is wasted to heat filaments in incandescent lamps, a century-old technology...

    http://nanohub.org/resources/2647

  2. BNC Annual Research Symposium: Nanoelectronics and Semiconductor Devices

    23 Apr 2007 | Online Presentations | Contributor(s): David Janes

    This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the...

    http://nanohub.org/resources/2632

  3. High-Aspect-Ratio Micromachining of Titanium: Enabling New Functionality and Opportunity in Micromechanical Systems Through Greater Materials Selection

    09 Apr 2007 | Online Presentations | Contributor(s): Masa Rao

    Traditionally, materials selection has been limited in high-aspect-ratio micromechanical applications, due primarily to the predominance of microfabrication processes and infrastructure dedicated...

    http://nanohub.org/resources/2590

  4. Atomistic Alloy Disorder in Nanostructures

    26 Feb 2007 | Online Presentations | Contributor(s): Gerhard Klimeck

    Electronic structure and quantum transport simulations are typically performed in perfectly ordered semiconductor structures. Bands and modes are defined resulting in quantized conduction and...

    http://nanohub.org/resources/2350

  5. Surprises on the nanoscale: Plasmonic waves that travel backward and spin birefringence without magnetic fields

    08 Jan 2007 | Online Presentations | Contributor(s): Daniel Neuhauser

    As nanonphotonics and nanoelectronics are pushed down towards the molecular scale, interesting effects emerge. We discuss how birefringence (different propagation of two polarizations) is...

    http://nanohub.org/resources/2256

  6. RF MEMS: Passive Components and Architectures

    02 Jan 2007 | Online Presentations | Contributor(s): Dimitrios Peroulis

    This seminar is an introduction to the MEMS technology as it applies to RF and Microwave systems. Besides discussing several key RF MEMS components (switches, varactors, inductors),...

    http://nanohub.org/resources/2141

  7. Design in the Nanometer Regime: Process Variation

    28 Nov 2006 | Online Presentations | Contributor(s): Kaushik Roy

    Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single....

    http://nanohub.org/resources/2018

  8. Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance

    28 Nov 2006 | Online Presentations | Contributor(s): Kaushik Roy

    The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures...

    http://nanohub.org/resources/2023

  9. MOSCNT: code for carbon nanotube transistor simulation

    14 Nov 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov

    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor...

    http://nanohub.org/resources/1989

  10. Nanoelectronics 101

    28 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and much more that we now take for granted. Moore's Law, posited by...

    http://nanohub.org/resources/1737

  11. Nanoelectronic Architectures

    24 Feb 2005 | Online Presentations | Contributor(s): Greg Snider

    Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at...

    http://nanohub.org/resources/181

  12. Understanding Phonon Dynamics via 1D Atomic Chains

    04 Apr 2006 | Online Presentations | Contributor(s): Timothy S Fisher

    Phonons are the principal carriers of thermal energy in semiconductors and insulators, and they serve a vital role in dissipating heat produced by scattered electrons in semiconductor devices....

    http://nanohub.org/resources/1186

  13. Three-Dimensional Simulations of Field Effect Sensors for DNA Detection

    03 Aug 2006 | Online Presentations | Contributor(s): Eddie Howell, Gerhard Klimeck

    Here, the development of a DNA field-effect transistor (DNAFET) simulator is described. In DNAFETs the gate structure of a silicon on insulator (SOI) field-effect transistor is replaced by a layer...

    http://nanohub.org/resources/1677

  14. Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs

    08 Aug 2006 | Online Presentations | Contributor(s): Monica Taba, Gerhard Klimeck

    Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical...

    http://nanohub.org/resources/1715

  15. Chemical Modification of GaAs with TAT Peptide and Alkylthiol Self-Assembled Monolayers

    03 Aug 2006 | Online Presentations | Contributor(s): Hamsa Jaganathan

    The use of self-assembled monolayers (SAM) on semiconductors creates a basis for the design and creation of bioelectronics, such as biosensors. The interface between the surface and an organic...

    http://nanohub.org/resources/1670

  16. Technique for High Spatial Resolution, Focused Electrical Stimulation for Electrically Excitable Tissue

    08 Aug 2006 | Online Presentations | Contributor(s): Matteo Mannino

    Cochlear implant devices have made use of electrode pulses as a method of nerve fiber stimulation since their early conception. Electrode stimulation is limiting in both quality and consistency,...

    http://nanohub.org/resources/1707

  17. DNA Nanowires

    06 Aug 2006 | Online Presentations | Contributor(s): Margarita Shalaev

    DNA is a relatively inexpensive and ubiquitous material that can be used as a scaffold for constructing nanowires. Our research focuses on the manufacturing of DNA-templated, magnetic nanowires....

    http://nanohub.org/resources/1679

  18. Surface Analysis of Organic Monlayers Using FTIR and XPS

    02 Aug 2006 | Online Presentations | Contributor(s): Jamie Nipple, Michael Toole, David Janes

    Current research concerning self-assembled monolayers (SAM) focuses on the fabrication of microelectronics utilizing a semiconductor/molecule/metal junction. This study seeks to investigate...

    http://nanohub.org/resources/1655

  19. NEMO 3D: Intel optimizations and Multiple Quantum Dot Simulations

    03 Aug 2006 | Online Presentations | Contributor(s): Anish Dhanekula, Gerhard Klimeck

    NEMO-3D is a nanoelectronic modeling tool that analyzes the electronic structure of nanoscopic devices. Nanoelectronic devices such as Quantum Dots (QDs) can contain millions of atoms,. Therefore,...

    http://nanohub.org/resources/1673

  20. ECE 612 Nanoscale Transistors (Fall 2006)

    08 Aug 2006 | Courses | Contributor(s): Mark Lundstrom

    Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT Nanoscale Transistors is a five-week online...

    http://nanohub.org/resources/1705

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.