Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Resources (81-100 of 314)

  1. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    16 Dec 2010 | | Contributor(s):: Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...

  2. Chemically Enhanced Carbon-Based Nanomaterials and Devices

    09 Nov 2010 | | Contributor(s):: Mark Hersam

    Carbon-based nanomaterials have attracted significant attention due to their potential to enable and/or improve applications such as transistors, transparent conductors, solar cells, batteries, and biosensors. This talk will delineate chemical strategies for enhancing the electronic and optical...

  3. Nanoelectronic Devices, With an Introduction to Spintronics

    09 Sep 2010 | | Contributor(s):: Supriyo Datta, Mark Lundstrom

      Nanoelectronic devices are at the heart of today's powerful computers and are also of great interest for many emerging applications including energy conversion, sensing and alternative computing paradigms. Our objective, however, is not to discuss specific devices or applications....

  4. Discussion Session 2 (Lectures 3 and 4)

    08 Sep 2010 | | Contributor(s):: Supriyo Datta

  5. Lecture 3: Introduction to NEGF

    08 Sep 2010 | | Contributor(s):: Supriyo Datta

  6. Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz Tight-Binding Orbital Model 3D Schrödinger-Poisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...

  7. Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors

    05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier

    This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.Learning Objectives:Band-To-Band Tunneling...

  8. Lecture 1b: Nanotransistors - A Bottom Up View

    20 Jul 2010 | | Contributor(s):: Mark Lundstrom

    MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for communications. In this lecture, I will present a simple, physical model for the nanoscale MOSFET...

  9. 2010 NCN Annual Review S13: External Education - Cal Poly Pomona

    16 Jun 2010 | | Contributor(s):: Tanya Faltens

  10. Drift-Diffusion Modeling and Numerical Implementation Details

    01 Jun 2010 | | Contributor(s):: Dragica Vasileska

    This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from the finite difference discretization of the Poisson and the continuity...

  11. Lecture 7: On Reliability and Randomness in Electronic Devices

    14 Apr 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationPrinciples of reliability physicsClassification of Electronic ReliabilityStructure Defects in Electronic MaterialsConclusions

  12. Lecture 9: Breakdown in Thick Dielectrics

    05 Apr 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  13. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    10 Mar 2010 | | Contributor(s):: Muhammad A. Alam

  14. Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions

    09 Mar 2010 | | Contributor(s):: Gerhard Klimeck

    One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The new boundary conditions are based on the partitioning of the device into emitter and collector...

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts

    07 Mar 2010 | | Contributor(s):: Eric Pop

  16. Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode

    07 Mar 2010 | | Contributor(s):: Eric Pop

  17. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  18. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  19. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

    07 Mar 2010 | | Contributor(s):: Eric Pop

  20. Illinois ECE 440 Solid State Electronic Devices, Lecture 21: P-N Diode Breakdown

    07 Mar 2010 | | Contributor(s):: Eric Pop