Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Resources (141-160 of 334)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 19: Current Flow in P-N Diode

    28 Oct 2009 | | Contributor(s):: Eric Pop

    Last time, we talked about unbiased p-n junction.Today: biased (Vext ≠ 0) p-n junction & current flow

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias

    18 Nov 2009 | | Contributor(s):: Eric Pop

    Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.

  3. Illinois ECE 440 Solid State Electronic Devices, Lecture 21: P-N Diode Breakdown

    07 Mar 2010 | | Contributor(s):: Eric Pop

  4. Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts

    07 Mar 2010 | | Contributor(s):: Eric Pop

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode

    07 Mar 2010 | | Contributor(s):: Eric Pop

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

    07 Mar 2010 | | Contributor(s):: Eric Pop

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 28&29: All Modes of BJT Operation

    02 Mar 2010 | | Contributor(s):: Eric Pop

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 2: Crystal Lattices

    14 Aug 2008 | | Contributor(s):: Eric Pop

    Crystal Lattices:Periodic arrangement of atomsRepeated unit cells (solid-state)Stuffing atoms into unit cellsDiamond (Si) and zinc blende (GaAs)crystal structuresCrystal planesCalculating densities

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    02 Mar 2010 | | Contributor(s):: Eric Pop

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

    02 Mar 2010 | | Contributor(s):: Eric Pop

  13. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

    01 Mar 2010 | | Contributor(s):: Eric Pop

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

    01 Mar 2010 | | Contributor(s):: Eric Pop

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

    01 Mar 2010 | | Contributor(s):: Eric Pop

  16. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

    01 Mar 2010 | | Contributor(s):: Eric Pop

  17. Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Discussion of scaleReview of atomic structureIntroduction to energy band model

  18. Illinois ECE 440 Solid State Electronic Devices, Lecture 4: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Energy Bands and CarriersBand gaps (lattice and temperature dependence)Band curvatureCarrier effective mass

  19. Illinois ECE 440 Solid State Electronic Devices, Lecture 5, Part 2 : Doping, Carrier Concentrations

    03 Aug 2009 | | Contributor(s):: Eric Pop, Omar Sobh

  20. Illinois ECE 440 Solid State Electronic Devices, Lecture 5: Intrinsic Material, Doping, Carrier Concentrations

    03 Aug 2009 | | Contributor(s):: Eric Pop, Omar Sobh