Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

Resources (61-80 of 334)

  1. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  2. ECE 606 Lecture 22: Non-ideal Effects

    11 Mar 2009 | | Contributor(s):: Muhammad A. Alam

  3. ECE 606 Lecture 23: AC Response

    13 Mar 2009 | | Contributor(s):: Muhammad A. Alam

  4. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  5. ECE 606 Lecture 24: Large Signal Response

    13 Mar 2009 | | Contributor(s):: Muhammad A. Alam

  6. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  7. ECE 606 Lecture 25: Schottky Diode I

    24 Mar 2009 | | Contributor(s):: Muhammad A. Alam

  8. ECE 606 Lecture 26: Schottky Diode II

    19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

  9. ECE 606 Lecture 26: The Future of Computational Electronics

    20 Dec 2012 | | Contributor(s):: Gerhard Klimeck

    Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

  10. ECE 606 Lecture 27: Introduction to Bipolar Transistors

    29 Mar 2009 | | Contributor(s):: Muhammad A. Alam

  11. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  12. ECE 606 Lecture 28: BJT Design I

    29 Mar 2009 | | Contributor(s):: Muhammad A. Alam

  13. ECE 606 Lecture 29: BJT Design II

    31 Mar 2009 | | Contributor(s):: Muhammad A. Alam

  14. ECE 606 Lecture 2: Geometry of Periodic Crystals

    28 Jan 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Volume & surface issues for BCC, FCC, Cubic latticesImportant material systemsMiller indices ConclusionsHelpful software tool: Crystal Viewer in the ABACUS tool suite.

  15. ECE 606 Lecture 2: Quantum Mechanics

    14 Sep 2012 | | Contributor(s):: Gerhard Klimeck

  16. ECE 606 Lecture 30: Heterojunction Bipolar Transistors I

    04 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  17. ECE 606 Lecture 31: Heterojunction Bipolar Transistors II

    04 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  18. ECE 606 Lecture 32: MOS Electrostatics I

    19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

  19. ECE 606 Lecture 33: MOS Electrostatics II

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  20. ECE 606 Lecture 34: MOSCAP Frequency Response

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam