
BJT Lab: hParameters Calculation Exercise
07 Jul 2009  Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal hparameters in commonbase configuration. Afterwards they need to derive the hparameters in commonemitter configuration in terms of the hparameters in the common base...

DriftDiffusion Modeling and Numerical Implementation Details
01 Jun 2010  Contributor(s):: Dragica Vasileska
This tutorial describes the constitutive equations for the driftdiffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from the finite difference discretization of the Poisson and the continuity...

From SemiClassical to Quantum Transport Modeling: ParticleBased Device Simulations
10 Aug 2009  Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantummechanically. An indepth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

From SemiClassical to Quantum Transport Modeling: Quantum Corrections to Semiclassical Approaches
10 Aug 2009  Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantummechanically. An indepth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

From SemiClassical to Quantum Transport Modeling: Quantum Transport  Recursive Green's function method, CBR approach and Atomistic
10 Aug 2009  Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantummechanically. An indepth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

Illinois ECE 440: Diffusion and Energy Band Diagram Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Diffusion of Carriers, Builtin Fields and Metal semiconductor junctions.

Illinois ECE 440: MOS Capacitor Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Threshold Voltage, MOS Band Diagram, and MOS CapacitanceVoltage Analysis.

Illinois ECE 440: Carrier Generation and Recombination and photoconductivity Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Optical Absorption, Excess Carrier Concentration, Steady State Carrier Generation, and QuasiFermi Levels.

Illinois ECE 440: Charge Carrier in Bulk Semiconductors Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers the effects of doping on carrier concentration in bulk silicon.

Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Carrier Transport in Semiconductors subjected to an electric field.

Illinois ECE 440: Introduction to Crystal Properties Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework Assignment covers basic introduction to Material Properties and Crystal Structures.

Illinois ECE 440: MOS FieldEffect Transistor Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Output Characteristics and Mobility Model of MOSFETs.

Illinois ECE 440: Photodiodes Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers Current and Voltage in an Illuminated Junction, Solar Cells, and PN Junction Simulation.

Illinois ECE 440: PN Junction Homework
28 Jan 2010   Contributor(s):: Mohamed Mohamed
This homework covers PN junctions in equilibrium, contact potential, and Space Charge at a Junction.

MOSCAP: Theoretical Exercise  High Frequency CV Curves
07 Jul 2009   Contributor(s):: Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.

PieceWise Constant Potential Barriers Tool: FirstTime User Guide
01 Jun 2009   Contributor(s):: Samarth Agarwal, Gerhard Klimeck
This supporting document for the PieceWise Constant Potential Barriers Tool serves as a firsttime user guide. Some basic ideas about quantum mechanical tunneling are introduced in addition to how device geometry influences tunneling probability. The transfer matrix and tightbinding...

Resonant Tunneling Diode Simulation with NEGF: FirstTime User Guide
01 Jun 2009   Contributor(s):: Samarth Agarwal, Gerhard Klimeck
This firsttime user guide for Resonant Tunneling Diode Simulation with NEGF provides some fundamental concepts regarding RTDs along with details on how device geometry and simulation parameters influence current and charge distribution inside the device.NCN@Purdue

SelfHeating Effects in NanoScale Devices. What do we know so far ...
10 Aug 2009   Contributor(s):: Dragica Vasileska, Stephen M. Goodnick
This presentation contains the research findings related to selfheating effects in nanoscale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in...

Tutorial for PADRE Based Simulation Tools
10 Aug 2009   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADREbased simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nanoscale devices.