Tags: devices

Description

On June 30, 1948, AT&T Bell Labs unveiled the transitor to the world, creating a spark of explosive economic growth that would lead into the Information Age. William Shockley led a team of researchers, including Walter Brattain and John Bardeen, who invented the device. Like the existing triode vacuum tube device, the transistor could amplify signals and switch currents on and off, but the transistor was smaller, cheaper, and more efficient. Moreover, it could be integrated with millions of other transistors onto a single chip, creating the integrated circuit at the heart of modern computers.

Today, most transistors are being manufactured with a minimum feature size of 60-90nm--roughly 200-300 atoms. As the push continues to make devices even smaller, researchers must account for quantum mechanical effects in the device behavior. With fewer and fewer atoms, the positions of impurities and other irregularities begin to matter, and device reliability becomes an issue. So rather than shrink existing devices, many researchers are working on entirely new devices, based on carbon nanotubes, spintronics, molecular conduction, and other nanotechnologies.

Learn more about transistors from the many resources on this site, listed below. Use our simulation tools to simulate performance characteristics for your own devices.

All Categories (101-120 of 327)

  1. Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts

    07 Mar 2010 | | Contributor(s):: Eric Pop

  2. Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode

    07 Mar 2010 | | Contributor(s):: Eric Pop

  3. Illinois ECE 440 Solid State Electronic Devices, Lecture 25: Intro to BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  4. Illinois ECE 440 Solid State Electronic Devices, Lecture 26: Narrow-base BJT

    07 Mar 2010 | | Contributor(s):: Eric Pop

  5. Illinois ECE 440 Solid State Electronic Devices, Lecture 27: BJT Gain

    07 Mar 2010 | | Contributor(s):: Eric Pop

  6. Illinois ECE 440 Solid State Electronic Devices, Lecture 28&29: All Modes of BJT Operation

    02 Mar 2010 | | Contributor(s):: Eric Pop

  7. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    02 Mar 2010 | | Contributor(s):: Eric Pop

  8. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

    02 Mar 2010 | | Contributor(s):: Eric Pop

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 34: MOS Field Effect Transistor (FET)

    02 Mar 2010 | | Contributor(s):: Eric Pop

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 35: Short Channel MOSFET and Non-Ideal Behavior

    02 Mar 2010 | | Contributor(s):: Eric Pop

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 36: MOSFET Scaling Limits

    02 Mar 2010 | | Contributor(s):: Eric Pop

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 37: MOSFET Analog Amplifier and Digital Inverter

    02 Mar 2010 | | Contributor(s):: Eric Pop

  13. Illinois ABE 446: Biological Nanoengineering

    11 Feb 2010 | | Contributor(s):: Kaustubh Bhalerao

    Nanodevice design through organization of functional biological components; bio-molecular function and bioconjugation techniques in nanotechnology; modulation of biological systems using nanotechnology; issues related to applying biological nanotechnology in food energy, health, and the environment.

  14. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    02 Feb 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions

  15. Illinois ECE 440: Diffusion and Energy Band Diagram Homework

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers Diffusion of Carriers, Built-in Fields and Metal semiconductor junctions.

  16. Illinois ECE 440: MOS Capacitor Homework

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers Threshold Voltage, MOS Band Diagram, and MOS Capacitance-Voltage Analysis.

  17. Illinois ECE 440: Carrier Generation and Recombination and photo-conductivity Homework

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers Optical Absorption, Excess Carrier Concentration, Steady State Carrier Generation, and Quasi-Fermi Levels.

  18. Illinois ECE 440: Charge Carrier in Bulk Semiconductors Homework

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers the effects of doping on carrier concentration in bulk silicon.

  19. Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers Carrier Transport in Semiconductors subjected to an electric field.

  20. Illinois ECE 440: Introduction to Crystal Properties Homework

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework Assignment covers basic introduction to Material Properties and Crystal Structures.