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What should be measurement for zener diode simulation in TCAD?
Closed | Responses: 0
I'm an electronics engineering student working on semiconductor device simulation using VisualTCAD software in my institute.
I design pn junction successfully with...
Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | | Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
Landauer Approach to Thermoelectrics
23 Jun 2013 | | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
NEMO5 Tutorial 4C: Graphene Nanostructures
20 Jul 2012 | | Contributor(s):: Junzhe Geng
NEMO5 Tutorials (2012 Summer School)
19 Jul 2012 | | Contributor(s):: James Fonseca, Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, Parijat Sengupta, Junzhe Geng, Mehdi Salmani Jelodar, Seung Hyun Park, Gerhard Klimeck
While the general topics presented in the summer school materials are still applicable, many details have changed. If you are looking at these to learn how to use NEMO5, check out the newer materials here:https://nanohub.org/resources/21824
NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions
18 Jul 2012 | | Contributor(s):: Yuling Hsueh
NEMO5 Tutorial 5B: Strain
18 Jul 2012 | | Contributor(s):: Hesameddin Ilatikhameneh
Learn how the NEMO5 strain solver works.
NEMO5 Tutorial 4B: Device Modeling - Metals
18 Jul 2012 | | Contributor(s):: Ganesh Krishna Hegde
Describes some of the modifications made to NEMO5 to include Nth nearest neighbor interactions so that metal electronic structure and transport can be studied. Also includes instructions on how to use NEMO5 input decks to obtain bulk metallic band structures.
NEMO5 Tutorial 7: Using NEMO5 to Quantitatively Predict Topological Insulator Behaviour
18 Jul 2012 | | Contributor(s):: Parijat Sengupta
NEMO5 Tutorial 6A: Device Simulation - Transport (Double Gate)
18 Jul 2012 | | Contributor(s):: Mehdi Salmani Jelodar, Seung Hyun Park, Zhengping Jiang, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
NEMO5 Tutorial 1: NEMO5 Technical Overview
18 Jul 2012 | | Contributor(s):: James Fonseca
This tutorial goes over the following topics:LicensingGetting NEMO5Getting HelpDocumentationCompilingWorkspaceParallel ComputingRun a job on workspace
NEMO5 Tutorial 2: Input and Output
18 Jul 2012 | | Contributor(s):: Michael Povolotskyi
NEMO5 Tutorial 4D: NEMO5 Python Solvers
17 Jul 2012 | | Contributor(s):: Daniel F Mejia
This tutorial presents a brief introduction to PythonSolvers, a way to expand NEMO5 functionality using Python. Basic principles and a walk through are presented.