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2011 NCN@Purdue Summer School: Electronics from the Bottom Up
20 Jul 2011 |
click on image for larger versionAlumni Discussion Group: LinkedIn
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How to simulate the GaN Power Device model
Q&A|Closed | Responses: 0
Hello All,
I’m new to device modeling and I want to numerically simulate GaN device equations using...
https://nanohub.org/answers/question/1316
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How to simulate the GaN Power Device model
Q&A|Closed | Responses: 0
Hello All,
I’m new to device modeling and I want to numerically simulate GaN device equations using...
https://nanohub.org/answers/question/1317
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a TCAD Lab
Introduction to TCAD Simulation
The existing semiconductor industry is now fundamentally built on the assumption that almost every aspect of a chip is first designed in software.
Process...
https://nanohub.org/wiki/aTCADLab
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A UCSD analytic TFET model
18 Dec 2015 | | Contributor(s):: Jianzhi Wu, Yuan Taur
A continuous, analytic I-V model is developed for double-gate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a gate-controlled channel potential that satisfies the source and drain boundary conditions. Verified by...
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A Verilog-A Compact Model for Negative Capacitance FET
28 Nov 2015 | Compact Models | Contributor(s):
By Muhammad Abdul Wahab1, Muhammad A. Alam1
Purdue University
The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to...
https://nanohub.org/publications/95/?v=1
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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
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Abdelaali Fargi
Abdelaali Fargi received his PhD in Physics of Semiconductor Devices and Electronics from Faculty of Sciences of Monastir (Tunisia) in 2016, the Master of Science Degree in Materials Science and...
https://nanohub.org/members/56303
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Ali Aldubaisi
https://nanohub.org/members/88716
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Anand Gautam
https://nanohub.org/members/23186
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Anis DJEDIDI
https://nanohub.org/members/55735
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Antal Ürmös
https://nanohub.org/members/37332
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Ardinc Edis
https://nanohub.org/members/224255
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Ashkan Behnam
Research assistant at University of Florida
https://nanohub.org/members/7846
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Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
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Atomistic Simulations of Reliability
01 Jul 2010 | | Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...
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Şenol Güneş
https://nanohub.org/members/60749
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Bagavathi Shivakumar
https://nanohub.org/members/55079
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bahram ganjipour
https://nanohub.org/members/86343
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Bisma Bilal
https://nanohub.org/members/294032