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BJT Lab
06 Feb 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
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Caterin Salas Redondo
https://nanohub.org/members/58664
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Chandramohan Paulraj
https://nanohub.org/members/54140
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Chapter 1: A Primer MOSCap Tool on nanoHUB.org
19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Shaikh S. Ahmed
The primary reason to study MOS (metal-oxide-semiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...
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Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
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Chen Zhang
I carried out researches on MBE growth of III-V bulk and nano-structures under the guidance of Prof. Yi Luo in Tsinghua Univ., Beijing China, where I learned all basics about semiconductor...
https://nanohub.org/members/64010
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chris mansun lee
I received the B.S.degree in microelectronics from Jilin university,Changchun,China,in 2011.From November 2011 to July 2014,I am a graduate student in Peking university ShenZhen graduate...
https://nanohub.org/members/64671
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Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
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Device Parameters Extraction Within Silvaco Simulation Software
30 Jul 2011 | | Contributor(s):: Dragica Vasileska
This set of slides explains the extract statements within SILVACO simulation software.
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Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
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Dhawal Dilip Mahajan
https://nanohub.org/members/65429
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Dhruba Mandal
https://nanohub.org/members/106332
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Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
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Dr. Saroj Kumar Patra
PhD in Electronics and Telecommunication with background in Applied Physics
https://nanohub.org/members/71367
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ECE 612 Lecture 23: RF CMOS
02 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Introduction,2) Small signal model,3) Transconductance,4) Self-gain,5) Gain bandwidth product,6) Unity power gain,7) Noise, mismatch, linearity…,8) Examples
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Edmund Banghart
https://nanohub.org/members/3228
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Electron Density in a Nanowire
30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
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Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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Electron-Electron Interactions
20 Jun 2011 | | Contributor(s):: Dragica Vasileska
This set of slides describes the electron-electron interactions scattering rates calculations as it occurs in bulk materials, low-dimensional structures and semiconductor devices.
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Fahad Al Mamun
https://nanohub.org/members/125385