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Device Parameters Extraction Within Silvaco Simulation Software
30 Jul 2011 | Contributor(s):: Dragica Vasileska
This set of slides explains the extract statements within SILVACO simulation software.
2011 NCN@Purdue Summer School: Electronics from the Bottom Up
20 Jul 2011 |
click on image for larger versionAlumni Discussion Group: LinkedIn
Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems
20 Jul 2011 | | Contributor(s):: J. L. Gray
Modeling and simulation play an important role in designing and optimizing PV systems. This tutorial is a broad overview of the topic including a look at detailed, numerical device simulation.
20 Jun 2011 | | Contributor(s):: Dragica Vasileska
This set of slides describes the electron-electron interactions scattering rates calculations as it occurs in bulk materials, low-dimensional structures and semiconductor devices.
a TCAD Lab
Introduction to TCAD Simulation
The existing semiconductor industry is now fundamentally built on the assumption that almost every aspect of a chip is first designed in software.
Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
Quantum Dot Wave Function (still image)
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
Electron Density in a Nanowire
30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
Atomistic Simulations of Reliability
06 Jul 2010 | | Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...
Simulation of laser devices with ActiveMedia nanophotonics tool (ACME NPDS)
This tutorial is intended to demonstrate how to build a device and analyze its optical properties and lasing behavior.
Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias
18 Nov 2009 | | Contributor(s):: Eric Pop
Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.
Tutorial for PADRE Based Simulation Tools
10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.
Illinois ECE 440 Solid State Electronic Devices, Lecture 7: Temperature Dependence of Carrier Concentrations
out of 5 stars
30 Dec 2008 | | Contributor(s):: Eric Pop