Tags: device simulations

Resources (1-20 of 24)

  1. Device Parameters Extraction Within Silvaco Simulation Software

    30 Jul 2011 | Contributor(s):: Dragica Vasileska

    This set of slides explains the extract statements within SILVACO simulation software.

  2. 2011 NCN@Purdue Summer School: Electronics from the Bottom Up

    20 Jul 2011 |

    click on image for larger versionAlumni Discussion Group: LinkedIn

  3. Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems

    20 Jul 2011 | | Contributor(s):: J. L. Gray

    Modeling and simulation play an important role in designing and optimizing PV systems. This tutorial is a broad overview of the topic including a look at detailed, numerical device simulation.

  4. Electron-Electron Interactions

    20 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This set of slides describes the electron-electron interactions scattering rates calculations as it occurs in bulk materials, low-dimensional structures and semiconductor devices.

  5. Quantum Dot Wave Function (Quantum Dot Lab)

    02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.

  6. Self-Assembled Quantum Dot Structure (pyramid)

    02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

  7. Quantum Dot Wave Function (still image)

    31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao

    Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.

  8. Self-Assembled Quantum Dot Wave Structure

    31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert

    A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

  9. Electron Density in a Nanowire

    30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra

    Electron Density in a circular Silicon nanowire transistor.

  10. Tunneling in an Nanometer-Scaled Transistor

    25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert

    Electrons tunneling through the gate of an ultra-scaled transistor.

  11. Atomistic Simulations of Reliability

    06 Jul 2010 | | Contributor(s):: Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 20: P-N Diode in Reverse Bias

    18 Nov 2009 | | Contributor(s):: Eric Pop

    Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.

  13. Tutorial for PADRE Based Simulation Tools

    10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.

  14. Illinois ECE 440 Solid State Electronic Devices, Lecture 7: Temperature Dependence of Carrier Concentrations

    30 Dec 2008 | | Contributor(s):: Eric Pop

  15. Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States

    04 Dec 2008 | | Contributor(s):: Eric Pop, Umair Irfan

  16. Real space first-principles semiempirical pseudopotentials for Fe/MgO/Fe

    03 Dec 2008 | | Contributor(s):: Kirk Bevan

    A set of semiempirical pseudopotentials for the atomistic modeling of Fe/MgO/Fe tunnel junctions. See the attached document for a full description of their derivation and the modeling approach.Document Abstract:We present a real space density functional theory (DFT) localized basis set...

  17. ECE 612 Lecture 23: RF CMOS

    02 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Introduction,2) Small signal model,3) Transconductance,4) Self-gain,5) Gain bandwidth product,6) Unity power gain,7) Noise, mismatch, linearity…,8) Examples

  18. Illinois ECE 440 Solid State Electronic Devices, Lecture 1 Introduction

    26 Nov 2008 | | Contributor(s):: Eric Pop

    Introduction to Solid State Electronic Devices

  19. From density functional theory to defect level in silicon: Does the “band gap problem” matter?

    01 Oct 2008 | | Contributor(s):: Peter A. Schultz

    Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...

  20. Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift

    19 Aug 2008 | | Contributor(s):: Eric Pop

    Discussion of scaleReview of atomic structureIntroduction to energy band model