
Device Parameters Extraction Within Silvaco Simulation Software
30 Jul 2011  Contributor(s):: Dragica Vasileska
This set of slides explains the extract statements within SILVACO simulation software.

2011 NCN@Purdue Summer School: Electronics from the Bottom Up
20 Jul 2011 
click on image for larger versionAlumni Discussion Group: LinkedIn

Solar Cells Lecture 3: Modeling and Simulation of Photovoltaic Devices and Systems
20 Jul 2011   Contributor(s):: J. L. Gray
Modeling and simulation play an important role in designing and optimizing PV systems. This tutorial is a broad overview of the topic including a look at detailed, numerical device simulation.

ElectronElectron Interactions
20 Jun 2011   Contributor(s):: Dragica Vasileska
This set of slides describes the electronelectron interactions scattering rates calculations as it occurs in bulk materials, lowdimensional structures and semiconductor devices.

Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011   Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) selfassembled quantum dot.

SelfAssembled Quantum Dot Structure (pyramid)
02 Feb 2011   Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.

Quantum Dot Wave Function (still image)
31 Jan 2011   Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) selfassembled quantum dot.

SelfAssembled Quantum Dot Wave Structure
31 Jan 2011   Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

Electron Density in a Nanowire
30 Jan 2011   Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.

Tunneling in an NanometerScaled Transistor
25 Jan 2011   Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultrascaled transistor.

Atomistic Simulations of Reliability
06 Jul 2010   Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intradie and dietodie...

Illinois ECE 440 Solid State Electronic Devices, Lecture 20: PN Diode in Reverse Bias
18 Nov 2009   Contributor(s):: Eric Pop
Recap diode (forward, zero, reverse) bias diagrams.Recap some of the equations.

Tutorial for PADRE Based Simulation Tools
10 Aug 2009   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This tutorial is intended for first time and medium level users of PADREbased simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nanoscale devices.

Illinois ECE 440 Solid State Electronic Devices, Lecture 7: Temperature Dependence of Carrier Concentrations
30 Dec 2008   Contributor(s):: Eric Pop

Illinois ECE 440 Solid State Electronic Devices, Lecture 6: Doping, Fermi Level, Density of States
04 Dec 2008   Contributor(s):: Eric Pop, Umair Irfan

Real space firstprinciples semiempirical pseudopotentials for Fe/MgO/Fe
03 Dec 2008   Contributor(s):: Kirk Bevan
A set of semiempirical pseudopotentials for the atomistic modeling of Fe/MgO/Fe tunnel junctions. See the attached document for a full description of their derivation and the modeling approach.Document Abstract:We present a real space density functional theory (DFT) localized basis set...

ECE 612 Lecture 23: RF CMOS
02 Dec 2008   Contributor(s):: Mark Lundstrom
Outline: 1) Introduction,2) Small signal model,3) Transconductance,4) Selfgain,5) Gain bandwidth product,6) Unity power gain,7) Noise, mismatch, linearity…,8) Examples

Illinois ECE 440 Solid State Electronic Devices, Lecture 1 Introduction
26 Nov 2008   Contributor(s):: Eric Pop
Introduction to Solid State Electronic Devices

From density functional theory to defect level in silicon: Does the “band gap problem” matter?
01 Oct 2008   Contributor(s):: Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...

Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift
19 Aug 2008   Contributor(s):: Eric Pop
Discussion of scaleReview of atomic structureIntroduction to energy band model