Tags: Dielectric Breakdown

Resources (1-11 of 11)

  1. [Illinois] AVS Meeting 2012: Dielectric Breakdown Study for High Performance, Reliable Top-gated Large-area Graphene Electronics

    04 Jun 2013 | | Contributor(s):: Vinod K. Sangwan

    An ultra-thin top-gate dielectric is essential for high-performance large-scale digital and analog electronics based on graphene field-effect transistors (G-FETs). Atomic layer deposition (ALD) has been utilized to grown top-gate dielectrics for high-performance G-FETs. However, ALD requires a...

  2. ECE 695A Lecture 30: Breakdown in Dielectrics with Defects

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:IntroductionTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  3. ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:Part 1 - Understanding Post-BD FET behaviorBD position determinationHard and Soft BD in FETsDistinguishing leakage and intrinsic FET parameters shiftsPart 2 - Impact of breakdown on digital circuit operationBD in ring oscillatorBDinSR AMcellTiming, BD into soft node

  4. ECE 695A Lecture 29: Breakdown of Thick Dielectrics

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:IntroductionSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleConclusions 

  5. ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Spatial vs. Temporal correlationTheory of correlated Dielectric BreakdownExcess leakage as a signature of correlated BDConclusions

  6. ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Position and time correlation of BD spotHow to determine the position of the BD SpotPosition correlation in BD spotsWhy is localization so weak?Conclusions

  7. ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions

  8. ECE 695A Lecture 25: Theory of Soft and Hard Breakdown

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions

  9. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...

  10. ECE 695A Lecture 21: Introduction to Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions

  11. ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam