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ECE 695A Lecture 21: Introduction to Dielectric Breakdown
05 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...
ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown
ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model
21 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions
ECE 695A Lecture 25: Theory of Soft and Hard Breakdown
Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions
ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains
28 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Spatial vs. Temporal correlationTheory of correlated Dielectric BreakdownExcess leakage as a signature of correlated BDConclusions
ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)
Outline:Position and time correlation of BD spotHow to determine the position of the BD SpotPosition correlation in BD spotsWhy is localization so weak?Conclusions
ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown
08 Apr 2013 | | Contributor(s):: Muhammad Alam
Outline:Part 1 - Understanding Post-BD FET behaviorBD position determinationHard and Soft BD in FETsDistinguishing leakage and intrinsic FET parameters shiftsPart 2 - Impact of breakdown on digital circuit operationBD in ring oscillatorBDinSR AMcellTiming, BD into soft node
ECE 695A Lecture 29: Breakdown of Thick Dielectrics
Outline:IntroductionSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleConclusions
ECE 695A Lecture 30: Breakdown in Dielectrics with Defects
Outline:IntroductionTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions
[Illinois] AVS Meeting 2012: Dielectric Breakdown Study for High Performance, Reliable Top-gated Large-area Graphene Electronics
04 Jun 2013 | | Contributor(s):: Vinod K. Sangwan
An ultra-thin top-gate dielectric is essential for high-performance large-scale digital and analog electronics based on graphene field-effect transistors (G-FETs). Atomic layer deposition (ALD) has been utilized to grown top-gate dielectrics for high-performance G-FETs. However, ALD requires a...