Tags: Dielectric Breakdown

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  1. ECE 695A Lecture 21: Introduction to Dielectric Breakdown

    05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Basic features of gate dielectric breakdown Physical characterization of breakdown spot Time-dependent defect generation Conclusions

    http://nanohub.org/resources/17027

  2. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is the name of the failure distribution that we expect for thin oxides? For thin oxides, is PMOS or NMOS more of a concern in modern transistors? What is DBIE? When...

    http://nanohub.org/resources/17249

  3. ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

    05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/17028

  4. ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model

    21 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Observations: Failure times are statistically distributed Models of Failure Distribution: Extrinsic vs. percolation Percolation theory of multiple Breakdown TDDB lifetime...

    http://nanohub.org/resources/17293

  5. ECE 695A Lecture 25: Theory of Soft and Hard Breakdown

    21 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Oxide breakdowns need not be catastrophic Observations about soft vs. hard breakdown A simple model for soft/hard breakdown Interpretation of experiments Conclusions

    http://nanohub.org/resources/17295

  6. ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains

    28 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Spatial vs. Temporal correlation Theory of correlated Dielectric Breakdown Excess leakage as a signature of correlated BD Conclusions

    http://nanohub.org/resources/17418

  7. ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)

    28 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Position and time correlation of BD spot How to determine the position of the BD Spot Position correlation in BD spots Why is localization so weak? Conclusions

    http://nanohub.org/resources/17419

  8. ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown

    08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Part 1 - Understanding Post-BD FET behavior BD position determination Hard and Soft BD in FETs Distinguishing leakage and intrinsic FET parameters shifts Part 2 - Impact of...

    http://nanohub.org/resources/17482

  9. ECE 695A Lecture 29: Breakdown of Thick Dielectrics

    08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Introduction Spatial and temporal dynamics during breakdown Breakdown in bulk oxides: puzzle Conclusions  

    http://nanohub.org/resources/17483

  10. ECE 695A Lecture 30: Breakdown in Dielectrics with Defects

    08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Introduction Theory of pre-existing defects: Thin oxides Theory of pre-existing defects: thick oxides Conclusions

    http://nanohub.org/resources/17486

  11. Introduction to Reliability

    Generalized Reliability Model A Blind Fish in a River with a Waterfall Many reliability problems are activated by a threshold. If this threshold value is exceeded, some phenomenons are...

    http://nanohub.org/wiki/IntroductiontoReliability

  12. Sambit Palit

    Sambit Palit is currently working on thick dielectric reliability and reliability of RF-MEMS devices with Prof. Muhammad Ashraful Alam in the Department of Electrical and Computer Engineering at...

    http://nanohub.org/members/30266

  13. [Illinois] AVS Meeting 2012: Dielectric Breakdown Study for High Performance, Reliable Top-gated Large-area Graphene Electronics

    04 Jun 2013 | Online Presentations | Contributor(s): Vinod K. Sangwan

    An ultra-thin top-gate dielectric is essential for high-performance large-scale digital and analog electronics based on graphene field-effect transistors (G-FETs). Atomic layer deposition (ALD)...

    http://nanohub.org/resources/18251