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MOSfet Homework Assignment - Role of Dielectric Constant and Thickness
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31 Jan 2008 | Teaching Materials | Contributor(s): David K. Ferry
Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters:
Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes),
poly-Si gate, junction depth...