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  1. MOSfet Homework Assignment - Role of Dielectric Constant and Thickness

    31 Jan 2008 | Teaching Materials | Contributor(s): David K. Ferry

    Use the MOSfet tool on nanoHUB to simulate a n-channel MOSFET with the following parameters: Lsd=LG=45nm (each 15 nodes), oxide thickness of 1.2 nm (K=3.9, 5 nodes), poly-Si gate, junction depth..., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.