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ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.4: PN Diode - Non-Ideal Effects
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L21.1: PN Diode - Conductance and Series Resistance
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.1: PN Diode - Charge Control Model
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.2: PN Diode - Turn-Off and Turn-On Characteristics
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.3: PN Diode - Steady-State Expression From Charge Continuity
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L23.1: Schottky Diode - Basics
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L23.2: Schottky Diode - Physical Processes
20 Jul 2023 |
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ECE 606 L23.3: Schottky Diode - Practical Issues
20 Jul 2023 |
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Power Diode Lab
21 Nov 2022 | | Contributor(s):: Jing Guo, Ning Yang
Calculate the critical breakdown electric field, break down voltage, depletion region thickness, and specific on resistance of power diodes.
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Comparing the Operation of p-i-n vs. p-n Junction Diodes Using PN Junction Lab in ABACUS
23 Aug 2017 | | Contributor(s):: André Schleife, Materials Science and Engineering at Illinois
In this activity, students use the PN Junction Lab simulation tool in ABACUS on nanoHUB to simulate different p-i-n or p-n diode structures. Plots of hole concentration and electric field as a function of position, along with the gand structure with and without applied bias, will be...
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Exams for Semiconductor Device Fundamentals
01 Jul 2013 | | Contributor(s):: Robert F. Pierret
Collected herein are 54 mostly hour tests that were utilized over the years in a junior/senior-level course entitled “Semiconductor Devices” offered by the School of Electrical and Computer Engineering at the West Lafayette campus of Purdue University. Although the material probed on...
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Semiconductor Device Fundamentals Testbook Module B: Diode Basics
01 Jul 2013 | | Contributor(s):: Robert F. Pierret
This is module B (part 2) of the Testbook for Semiconductor Device Fundamentals.
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Neutron Induced Fission Betavoltaic Battery
11 Apr 2012 | | Contributor(s):: Marvin Tan
A betavoltaic battery having layers of fissile radioisotopes 8, moderating material 7, beta-decaying radioisotopes 6, and semiconductor diode 4 & 5 adjacently stacked one above another, is proposed. Neutrons produced by the chain reaction in the fissile radioisotope 8 are slowed down by the...
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Archimedes, GNU Monte Carlo simulator
29 May 2008 | | Contributor(s):: Jean Michel D Sellier
GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials