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ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.4: PN Diode - Non-Ideal Effects
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L21.1: PN Diode - Conductance and Series Resistance
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.1: PN Diode - Charge Control Model
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.2: PN Diode - Turn-Off and Turn-On Characteristics
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.3: PN Diode - Steady-State Expression From Charge Continuity
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L23.1: Schottky Diode - Basics
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L23.2: Schottky Diode - Physical Processes
20 Jul 2023 |
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ECE 606 L23.3: Schottky Diode - Practical Issues
20 Jul 2023 |
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May 19 2023
Recent Advances in Surface Emitting Lasers
Semiconductor-based lasers have shown to enjoy a broad range of industrial, medical, and research applications during the last three decades, including data communication, sensing, high-power...
https://nanohub.org/events/details/2258
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Power Diode Lab
21 Nov 2022 | | Contributor(s):: Jing Guo, Ning Yang
Calculate the critical breakdown electric field, break down voltage, depletion region thickness, and specific on resistance of power diodes.
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Andreas Hemmetter
Andreas Hemmetter received his B.Sc. degree in physics from TU Dresden (Dresden, Germany) in 2016, and his M.Sc. degree in metamaterials and nanophotonics from ITMO University (St. Petersburg,...
https://nanohub.org/members/280091
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Comparing the Operation of p-i-n vs. p-n Junction Diodes Using PN Junction Lab in ABACUS
23 Aug 2017 | | Contributor(s):: André Schleife, Materials Science and Engineering at Illinois
In this activity, students use the PN Junction Lab simulation tool in ABACUS on nanoHUB to simulate different p-i-n or p-n diode structures. Plots of hole concentration and electric field as a function of position, along with the gand structure with and without applied bias, will be...
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scattering current is larger than ballistic current
Q&A|Closed | Responses: 1
Dear Sellier,
1. I am new to Archimedes simulations. I tried to run the example code diode.input as such without any modifications. The result I obtained is embarassing.
set1 https://nanohub.org/answers/question/1245
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Exams for Semiconductor Device Fundamentals
01 Jul 2013 | | Contributor(s):: Robert F. Pierret
Collected herein are 54 mostly hour tests that were utilized over the years in a junior/senior-level course entitled “Semiconductor Devices” offered by the School of Electrical and Computer Engineering at the West Lafayette campus of Purdue University. Although the material probed on...
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Semiconductor Device Fundamentals Testbook Module B: Diode Basics
01 Jul 2013 | | Contributor(s):: Robert F. Pierret
This is module B (part 2) of the Testbook for Semiconductor Device Fundamentals.
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Neutron Induced Fission Betavoltaic Battery
11 Apr 2012 | | Contributor(s):: Marvin Tan
A betavoltaic battery having layers of fissile radioisotopes 8, moderating material 7, beta-decaying radioisotopes 6, and semiconductor diode 4 & 5 adjacently stacked one above another, is proposed. Neutrons produced by the chain reaction in the fissile radioisotope 8 are slowed down by the...
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Archimedes, GNU Monte Carlo simulator
29 May 2008 | | Contributor(s):: Jean Michel D Sellier
GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials