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  1. Atomistic Simulations of Reliability

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    06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

    Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently …

    https://nanohub.org/resources/9253

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