Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder
14 Jan 2008 | Publications | Contributor(s): Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck
Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, …
https://nanohub.org/resources/3827