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BTI Simulator for Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model
17 Oct 2016 | | Contributor(s):: Narendra Parihar, Rakesh P Rao, Souvik Mahapatra
This simulator calculates the kinetics associated with hydrogen release from the Gate during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model". The...