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Multi-walled/Single-walled Carbon Nanotube (MWCNT/SWCNT) Interconnect Lumped Compact Model Considering Defects, Contact resistance and Doping impact
11 Jul 2018 | Compact Models | Contributor(s):
By Rongmei Chen1, Jie LIANG1, Jaehyun Lee2, Vihar Georgiev2, Aida Todri1
1. CNRS 2. University of Glasgow
In this project, we present SWCNT and MWCNT interconnect compact models. These models consider the impact of CNT defects, the chirality and contact resistance between CNT-electrode (Pd) on CNT...
UCSB Graphene Nanoribbon Interconnect Compact Model
21 Apr 2015 | Compact Models | Contributor(s):
By Junkai Jiang1, Wei Cao1, Kaustav Banerjee1
University of California Santa Barbara
UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was...
Quantum Workshop IV: Modeling PN Junctions
16 Mar 2015 | | Contributor(s):: Stella Quinones
Students explore the PN Junction Simulation Tool in order to understand depletion, carrier modeling, and PN junction device physics. Analyze (i) carrier concentration and electric field as a function of doping, and (ii) energy barriers, depletion widths, and net charge density as a function of...
Quantum Workshop II: Energy Band Model and Doping
31 Jan 2015 | | Contributor(s):: Stella Quinones
This exercise uses several nanoHUB tools associated with fundamental semiconductor device knowledge, such as the Effect of Doping on Semiconductors, Semiconductor Doping, and Carrier Concentration tools. Students are asked to compare bond models with energy band models, examine...
ECE 606 Lecture 7: Intrinsic semiconductors and Concepts of Doping
28 Sep 2012 | | Contributor(s):: Gerhard Klimeck
Mobility and Resistivity Tool
15 Jun 2012 | | Contributor(s):: Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones
Understand how doping affects mobility and resistivity.
13 Jun 2012 | | Contributor(s):: Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.
11 Apr 2012 | | Contributor(s):: Ivan Santos, Stella Quinones
Understand N-Type and P-Type Semiconductor Doping.
To Calculate the self consistent equation for Mean field in a Doped Semiconductor
Closed | Responses: 0
1. The problem statement, all variables and given/known data
Magnesium atom is introduced into a Copper crystal where electrons are free to move in a fermi sphere until equilibrium is...
Carrier Statistics Lab Learning Materials
By completing the Carrier-Statistics Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand Fermi-Dirac and...
Useful for very high doping reverse bias conditions?
Closed | Responses: 1
I want to know how suitable this tool is for calculating IV characteristics for very high doped pn junctions into the 10(18) – 10(19) /cm3 under reverse bias conditions. It...