
UCSB Graphene Nanoribbon Interconnect Compact Model
21 Apr 2015  Compact Models  Contributor(s):
By Junkai Jiang^{1}, Wei Cao^{1}, Kaustav Banerjee^{1}
University of California Santa Barbara
UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was...
http://nanohub.org/publications/57/?v=1

Quantum Workshop IV: Modeling PN Junctions
16 Mar 2015   Contributor(s):: Stella Quinones
Students explore the PN Junction Simulation Tool in order to understand depletion, carrier modeling, and PN junction device physics. Analyze (i) carrier concentration and electric field as a function of doping, and (ii) energy barriers, depletion widths, and net charge density as a function of...

Quantum Workshop II: Energy Band Model and Doping
31 Jan 2015   Contributor(s):: Stella Quinones
This exercise uses several nanoHUB tools associated with fundamental semiconductor device knowledge, such as the Effect of Doping on Semiconductors, Semiconductor Doping, and Carrier Concentration tools. Students are asked to compare bond models with energy band models, examine...

ECE 606 Lecture 7: Intrinsic semiconductors and Concepts of Doping
28 Sep 2012   Contributor(s):: Gerhard Klimeck

Mobility and Resistivity Tool
15 Jun 2012   Contributor(s):: Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones
Understand how doping affects mobility and resistivity.

Carrier Concentration
13 Jun 2012   Contributor(s):: Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.

Semiconductor Doping
11 Apr 2012   Contributor(s):: Ivan Santos, Stella Quinones
Understand NType and PType Semiconductor Doping.

To Calculate the self consistent equation for Mean field in a Doped Semiconductor
Closed  Responses: 0
1. The problem statement, all variables and given/known data
Magnesium atom is introduced into a Copper crystal where electrons are free to move in a fermi sphere until equilibrium is...
http://nanohub.org/answers/question/978

Carrier Statistics Lab Learning Materials
By completing the CarrierStatistics Lab in ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand FermiDirac and...
http://nanohub.org/wiki/CarrierStatisticsPage

Useful for very high doping reverse bias conditions?
Closed  Responses: 1
I want to know how suitable this tool is for calculating IV characteristics for very high doped pn junctions into the 10^{(18) – 10}(19) /cm3 under reverse bias conditions. It...
http://nanohub.org/answers/question/664