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To Calculate the self consistent equation for Mean field in a Doped Semiconductor
Closed | Responses: 0
1. The problem statement, all variables and given/known data
Magnesium atom is introduced into a Copper crystal where electrons are free to move in a fermi sphere until equilibrium is...
Useful for very high doping reverse bias conditions?
Closed | Responses: 1
I want to know how suitable this tool is for calculating IV characteristics for very high doped pn junctions into the 10(18) – 10(19) /cm3 under reverse bias conditions. It...
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13 Jun 2012 | Tools | Contributor(s): Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.
Carrier Statistics Lab Learning Materials
By completing the Carrier-Statistics Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand Fermi-Dirac and...
ECE 606 Lecture 7: Intrinsic semiconductors and Concepts of Doping
28 Sep 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
Mobility and Resistivity Tool
15 Jun 2012 | Tools | Contributor(s): Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones
Understand how doping affects mobility and resistivity.
Quantum Workshop II: Energy Band Model and Doping
31 Jan 2015 | Teaching Materials | Contributor(s): Stella Quinones
This exercise uses several nanoHUB tools associated with fundamental semiconductor device knowledge, such as the Effect of Doping on Semiconductors, Semiconductor Doping, and Carrier...
Quantum Workshop IV: Modeling PN Junctions
16 Mar 2015 | Teaching Materials | Contributor(s): Stella Quinones
Students explore the PN Junction Simulation Tool in order to understand depletion, carrier modeling, and PN junction device physics. Analyze (i) carrier concentration and electric field as a...
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11 Apr 2012 | Tools | Contributor(s): Ivan Santos, Stella Quinones
Understand N-Type and P-Type Semiconductor Doping.
UCSB Graphene Nanoribbon Interconnect Compact Model
21 Apr 2015 | Compact Models | Contributor(s):
By Junkai Jiang1, Wei Cao1, Kaustav Banerjee1
University of California Santa Barbara
UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was...