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A Matlab 1D-Poisson-drift-diffusion simulator for semiconductor devices
04 Mar 2024 | | Contributor(s):: Chien-Ting Tung
A Matlab 1D-Poisson-Drift-Diffusion solver that can simulate basic semiconductor devies such as PN diode, Schottky diode, MOS capacitor... It solves Poisson-Drift-Diffusion with finite difference method, Slotboom variable, and Gummel iteration. I provide 4 examples: PN diode,...
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ABACUS Tool Suite and Bulk Semiconductors (Fall 2023)
01 Sep 2023 | | Contributor(s):: Gerhard Klimeck
In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination....
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ECE 606 L17.1: Transport - Drift Current
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ABACUS Drift-Diffusion-Lab with Bias and Light (Spring 2022)
05 May 2022 | | Contributor(s):: Gerhard Klimeck
In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...
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ABACUS Drift-Diffusion-Lab with Bias and Light (Winter 2021)
19 Jan 2022 | | Contributor(s):: Gerhard Klimeck
In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...
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ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
https://nanohub.org/wiki/EduSemiconductor2
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Research Article: Drift-insensitive distributed calibration of probe microscope scanner in nanometer range: Virtual mode
Blog
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19 May 2016 |
Posted by Rostislav Vladimirovich Lapshin
R. V. Lapshin, Drift-insensitive distributed calibration of probe microscope scanner in nanometer range: Virtual mode, Applied Surface Science, vol. 378, pp. 530-539, 2016 (DOI:...
https://nanohub.org/members/112015/blog/2016/05/research-article-drift-insensitive-distributed-calibration-of-probe-microscope-scanner-in
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Research Article: Drift-insensitive distributed calibration of probe microscope scanner in nanometer range: Approach description
Blog
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04 Dec 2015 |
Posted by Rostislav Vladimirovich Lapshin
R. V. Lapshin, Drift-insensitive distributed calibration of probe microscope scanner in nanometer range: Approach description, Applied Surface Science, vol. 359, pp. 629-636, 2015 (DOI:...
https://nanohub.org/members/112015/blog/2015/12/drift-insensitive-distributed-calibration-of-probe-microscope-scanner-in-nanometer-range-approach
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ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012 | | Contributor(s):: Gerhard Klimeck
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Drift Diffusion Lab Worked out problems (Drift)
18 Aug 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
This sample worked out problem illustrated the concept of mobility. Mobility values are computed for different material and doping levels.
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Nanotechnology Animation Gallery
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also...
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Illinois ECE 440: Introduction to Carrier Drift and Mobility Homework
28 Jan 2010 | | Contributor(s):: Mohamed Mohamed
This homework covers Carrier Transport in Semiconductors subjected to an electric field.
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ECE 656 Lecture 14: Solving the BTE: 1D/RTA
07 Oct 2009 | | Contributor(s):: Mark Lundstrom
Outline:The RTA Solving the BTE: driftSolving the BTE: diffusionEnergy-dependent scattering timeRelation to LandauerDiscussionSummary
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Illinois ECE 440 Solid State Electronic Devices, Lectures 8 and 9: Drift Mobility
02 Jan 2009 | | Contributor(s):: Eric Pop
Carrier Mobility and DriftECE 440: Lectures 8-9Carrier Mobility and DriftLet’s recap the 5-6 major concepts so far: Memorize a few things, but recognize many.(why? semiconductors require lots of approximations)Why all the fuss about the abstract concept of EF?Consider (for example) joining an...
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Drift Diffusion Lab: First-Time User Guide
13 Jun 2009 | | Contributor(s):: Saumitra Raj Mehrotra, Benjamin P Haley
This first-time user guide provides introductory material to Drift Diffusion Lab on nanoHUB. It includes a tour of the Rappture interface, which notes key inputs and typical outputs. It also provides an introduction to concepts of drift and diffusion in a semiconductor. We discuss the default...
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ECE 606 Lecture 16: Carrier Transport
23 Feb 2009 | | Contributor(s):: Muhammad A. Alam
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Illinois ECE 440 Solid State Electronic Devices, Lecture 3: Energy Bands, Carrier Statistics, Drift
19 Aug 2008 | | Contributor(s):: Eric Pop
Discussion of scaleReview of atomic structureIntroduction to energy band model
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Illinois ECE 440 Solid State Electronic Devices, Lecture 4: Energy Bands, Carrier Statistics, Drift
19 Aug 2008 | | Contributor(s):: Eric Pop
Energy Bands and CarriersBand gaps (lattice and temperature dependence)Band curvatureCarrier effective mass
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MuGFET
17 Jan 2008 | | Contributor(s):: SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
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MuGFET: First-Time User Guide
28 Apr 2008 | | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...