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1D Drift Diffusion Model for Crystalline Solar Cells
18 Apr 2011 | Tools | Contributor(s): Dragica Vasileska, Xufeng Wang, Shankar Ramakrishnan
Simulate a 1D solar cell of crystalline material with drift diffusion equations
Newton’s method to solve poisson, continuity, drift diffusion equation?
Closed | Responses: 0
Hi, I want to solve poisson, continuity, drift diffusion equation with newton's method.
Is there any material in nanohub that guides me how to do it?
Closed | Responses: 1
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 15-30’. Did I miss something ?
20 Mar 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
Drift-Diffusion Lab Learning Materials
By completing the Drift-Diffusion Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to: a) understand the phenomenon of drift and...
Drift-Diffusion Modeling and Numerical Implementation Details
01 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result...
ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
10 Oct 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ECE 606 Lecture 16: Carrier Transport
0.0 out of 5 stars
23 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 656 Lecture 10: The Drift-Diffusion Equation
30 Sep 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Transport in the bulk
The DD equation
DD equation with B-field
ECE 656 Lecture 28: Balance Equation Approach I
13 Nov 2009 | Online Presentations | Contributor(s): Mark Lundstrom
General continuity equation
Carrier continuity equation
ECE 656 Lecture 30: Balance Equation Approach I
09 Feb 2012 | Online Presentations | Contributor(s): Mark Lundstrom
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I
ECE 656 Lecture 36: The Course in a Lecture
14 Dec 2009 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 656 Lecture 41: Transport in a Nutshell
21 Feb 2012 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 656 Lecture 6: Near-Equilibrium Transport in the Bulk
20 Sep 2011 | Online Presentations | Contributor(s): Mark Lundstrom
From Semi-Classical to Quantum Transport Modeling
10 Aug 2009 | Series | Contributor(s): Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is...
From Semi-Classical to Quantum Transport Modeling: Drift-Diffusion and Hydrodynamic Modeling
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
How Quantum-Mechanical Space-Quantization is Implemented in Schred, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
5.0 out of 5 stars
29 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska
This brief presentation outlines how one can implement quantum-mechanical space quantization effects exactly (using Schred) and approximately in drift-diffusion (using SILVACO), as well as...
Lecture 1: Review of MOSFET Fundamentals
4.0 out of 5 stars
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...
30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)