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1D Drift Diffusion Model for Crystalline Solar Cells
16 Apr 2011 | | Contributor(s):: Dragica Vasileska, Xufeng Wang, Shankar Ramakrishnan
Simulate a 1D solar cell of crystalline material with drift diffusion equations
Newton’s method to solve poisson, continuity, drift diffusion equation?
Closed | Responses: 0
Hi, I want to solve poisson, continuity, drift diffusion equation with newton's method.
Is there any material in nanohub that guides me how to do it?
Closed | Responses: 1
Do not know why, but despite the 21 points simulation asked (default), the simulation actually calculates ~500 voltage points and the simulation last 15-30’. Did I miss something ?
06 Feb 2008 | | Contributor(s):: Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
Computational and Experimental Study of Transport in Advanced Silicon Devices
27 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
Drift-Diffusion Lab Learning Materials
By completing the Drift-Diffusion Lab in ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to: a) understand the phenomenon of drift and...
Drift-Diffusion Modeling and Numerical Implementation Details
28 May 2010 | | Contributor(s):: Dragica Vasileska
This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from the finite difference discretization of the Poisson and the continuity...
ECE 606 Lecture 11: Interface States Recombination/Carrier Transport
27 Sep 2012 | | Contributor(s):: Gerhard Klimeck
ECE 606 Lecture 16: Carrier Transport
out of 5 stars
23 Feb 2009 | | Contributor(s):: Muhammad A. Alam
ECE 656 Lecture 10: The Drift-Diffusion Equation
30 Sep 2009 | | Contributor(s):: Mark Lundstrom
Outline:Transport in the bulkThe DD equationIndicial notationDD equation with B-field
ECE 656 Lecture 28: Balance Equation Approach I
13 Nov 2009 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionGeneral continuity equationCarrier continuity equationCurrent equationSummary
ECE 656 Lecture 30: Balance Equation Approach I
09 Feb 2012 | | Contributor(s):: Mark Lundstrom
This lecture should be viewed in the 2009 teaching ECE 656 Lecture 28: Balance Equation Approach I
ECE 656 Lecture 36: The Course in a Lecture
14 Dec 2009 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 41: Transport in a Nutshell
21 Feb 2012 | | Contributor(s):: Mark Lundstrom
ECE 656 Lecture 6: Near-Equilibrium Transport in the Bulk
20 Sep 2011 | | Contributor(s):: Mark Lundstrom
From Semi-Classical to Quantum Transport Modeling
10 Aug 2009 | | Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...
From Semi-Classical to Quantum Transport Modeling: Drift-Diffusion and Hydrodynamic Modeling
How Quantum-Mechanical Space-Quantization is Implemented in Schred, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
27 Jul 2008 | | Contributor(s):: Dragica Vasileska
This brief presentation outlines how one can implement quantum-mechanical space quantization effects exactly (using Schred) and approximately in drift-diffusion (using SILVACO), as well as particle-based device simulators (using Quamc2D).
Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
30 Mar 2006 | | Contributor(s):: Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)