nanoHUB.org - Tags: drift velocity: resources
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Wed, 27 Aug 2014 07:28:04 -0400HUBzero - The open source platform for scientific and educational collaborationen-gbCopyright 2014 nanoHUB.orgTagsManual for the Generalized Bulk Monte Carlo Tool
http://nanohub.org/resources/11474
http://nanohub.org/resources/11474This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.]]>39Fri, 24 Jun 2011 21:45:16 -0400ECE 656 Lecture 14: Solving the BTE: 1D/RTA
http://nanohub.org/resources/7506
http://nanohub.org/resources/7506Outline:

The RTA

Solving the BTE: drift

Solving the BTE: diffusion

Energy-dependent scattering time

Relation to Landauer

Discussion

Summary

]]>1Wed, 07 Oct 2009 21:21:52 -0400Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations
http://nanohub.org/resources/5321
http://nanohub.org/resources/5321User needs to calculate and compare to experiment the velocity field characteristics for electrons in Si for different crystalographic directions and 77K and 300K temperatures.]]>39Fri, 22 Aug 2008 13:09:38 -0400Bulk Monte Carlo Lab
http://nanohub.org/resources/bulkmc
http://nanohub.org/resources/bulkmcThe Bulk Monte Carlo Tool calculates the bulk values of the electron drift velocity and electron average energy for electric fields applied in arbitrary crystallographic direction in both column IV (Si and Ge) and III-V (GaAs, SiC and GaN) materials. All relevant scattering mechanisms for the...]]>7Thu, 21 Aug 2008 15:29:16 -0400Homework Assignment for Bulk Monte Carlo Lab: Arbitrary Crystallographic Direction
http://nanohub.org/resources/5275
http://nanohub.org/resources/5275This exercise teaches the users how the average carrier velocity, average carrier energy and vally occupation change with the application of the electric field in arbitrary crystalographic direction]]>39Thu, 21 Aug 2008 11:50:00 -0400Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC
http://nanohub.org/resources/4845
http://nanohub.org/resources/4845A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool,...]]>3Wed, 02 Jul 2008 16:31:18 -0400Ensemble Monte Carlo Method Described
http://nanohub.org/resources/4439
http://nanohub.org/resources/4439In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR]]>1Mon, 28 Apr 2008 13:17:11 -0400