Tags: drift velocity

Resources (1-7 of 7)

  1. Bulk Monte Carlo Lab

    27 Apr 2008 | | Contributor(s):: Dragica Vasileska, Mark Lundstrom, Stephen M. Goodnick, Gerhard Klimeck

    This tool calculates the bulk values of the carrier drift velocity and average electron energy in any material in which the conduction band is represented by a three valley model. Examples include Si, Ge and GaAs.

  2. Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC

    01 Jul 2008 | | Contributor(s):: Dragica Vasileska

    A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...

  3. ECE 656 Lecture 14: Solving the BTE: 1D/RTA

    02 Oct 2009 | | Contributor(s):: Mark Lundstrom

    Outline:The RTA Solving the BTE: driftSolving the BTE: diffusionEnergy-dependent scattering timeRelation to LandauerDiscussionSummary

  4. Ensemble Monte Carlo Method Described

    27 Apr 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry

    In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR

  5. Homework Assignment for Bulk Monte Carlo Lab: Arbitrary Crystallographic Direction

    20 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise teaches the users how the average carrier velocity, average carrier energy and vally occupation change with the application of the electric field in arbitrary crystalographic direction

  6. Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations

    21 Aug 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    User needs to calculate and compare to experiment the velocity field characteristics for electrons in Si for different crystalographic directions and 77K and 300K temperatures.

  7. Manual for the Generalized Bulk Monte Carlo Tool

    23 Jun 2011 | | Contributor(s):: Raghuraj Hathwar, Dragica Vasileska

    This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.