Rode's Method: Theory and Implementation

06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility …

http://nanohub.org/resources/9249

Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present …

http://nanohub.org/resources/6067

Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

Mobility degradation due to generation of interface traps, Δµeff(NIT), is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there …

http://nanohub.org/resources/4835