nanoHUB tools will be briefly unavailable due to scheduled host maintenance on Sunday, October 1st, 2017 between the hours of 7:00 am ET and 17:00 pm ET. All tool sessions will be expired. We apologize for any inconvenience.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Rode's Method: Theory and Implementation
06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility...
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
5.0 out of 5 stars
31 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
0.0 out of 5 stars
01 Jul 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interface
traps, Δµeff(NIT), is a well-known phenomenon that has been
theoretically interpreted by several mobility models. Based on
these analysis, there...