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Tags: Effective Mobility

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Rode's Method: Theory and Implementation

This resource has a 5.4 Ranking

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Total: updated 30 Jun 2014

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06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility...
http://nanohub.org/resources/9249
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

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Total: updated 30 Jun 2014

Users: 254

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23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...
http://nanohub.org/resources/6067
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

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30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is...
http://nanohub.org/resources/4835

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Users:	208

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Usage Stats
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Users:	254

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