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1. Rode's Method: Theory and Implementation

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   06 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska

   This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility...

   http://nanohub.org/resources/9249

2. Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors

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   23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad A. Alam

   Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we...

   http://nanohub.org/resources/6067

3. Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

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   30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

   Mobility degradation due to generation of interface traps, Δµeff(NIT), is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there...

   http://nanohub.org/resources/4835