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Tags: embedded systems

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  1. When we deposte the gold nanoparticle on active material in transistors, the gap between two nanoparticle is 0.5 nm, what type of tunneling barrier will be forming?

    Closed | Responses: 0

    I have made a Pentacene memory transistor, here I have deposited the gold nano particles on active material with different nanometer spacing between gold nano particles and pentacene,finally...

    http://nanohub.org/answers/question/1197

  2. Parag Barua

    http://nanohub.org/members/71699

  3. radhe shyam kumar gupta

    http://nanohub.org/members/70760

  4. Amr Younis

    BSc of Electronics & Communications, Faculty of Engineering, Alexandria University, 1988

    http://nanohub.org/members/69431

  5. K. R. Kashwan

    http://nanohub.org/members/61340

  6. md abdul haleem bahadur

    http://nanohub.org/members/55885

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