Tags: FET

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  1. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model

    08 Feb 2016 | | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen

    SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

  2. SPICE Model of Graphene Nanoribbon FETs

    12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen

    Graphene Nano-Ribbons Field-Effect Transistors HSPICE implementation based on the following two publications:[1] Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013). A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay...