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15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
01 Nov 2016 | | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
26 Apr 2009 | | Contributor(s):: Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
ECE 612 Lecture 26: Heterostructure FETs
out of 5 stars
10 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model
08 Feb 2016 | | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.
20 May 2011 | | Contributor(s):: Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene field-effect transistor.
Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008 | | Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...
MuGFET: First-Time User Guide
28 Apr 2008 | | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...
OMEN Nanowire: solve the challenge
05 Feb 2011 | | Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
SPICE Model of Graphene Nanoribbon FETs
27 Feb 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
Graphene Nano-Ribbons Field-Effect Transistors HSPICE implementation based on the following two publications: Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013). A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay...