
15Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel FieldEffect Transistors
01 Nov 2016   Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.

how to simulate insulator in a GNRFET with matlab?
Closed  Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
http://nanohub.org/answers/question/1583

What simulation for simulating CNTFET as biosensor applications ?
Closed  Responses: 0
I used simulator such as fettoy and moscnt for device simulation. However, I tried to find a mechanism for utilizing the CNTFET Fettoy as biosensor by relation the permittivity of the Gate...
http://nanohub.org/answers/question/804

A Z M Nowzesh Hasan
http://nanohub.org/members/183710

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

Akash Paharia
Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...
http://nanohub.org/members/38550

Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009   Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

CCAM Compact Carbon Nanotube FieldEffect Transistor Model
06 Oct 2015  Compact Models  Contributor(s):
By Michael Schroter^{1}, Max Haferlach^{2}, Martin Claus^{2}
1. UCSD 2. Technische Universität Dresden
CCAM is a semiphysical carbon nanotube fieldeffect transistor model applicable for digital, analog and high frequency applications.
http://nanohub.org/publications/62/?v=2

CNT Mobility
26 Apr 2009   Contributor(s):: Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in backgated CNTFET devices at low field

Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013   Contributor(s):: Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008   Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) IV characteristics,5) Device Structure / Materials,6) Summary.

Flexible Transition Metal Dichalcogenide FieldEffect Transistor (TMDFET) HSPICE Model
08 Feb 2016   Contributor(s):: Morteza Gholipour, YingYu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide fieldeffect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16nm technology node. This model can be used for circuitlevel simulations.

Flexible Transition Metal Dichalcogenide FieldEffect Transistor (TMDFET) Model
07 Apr 2016  Compact Models  Contributor(s):
By Morteza Gholipour^{1}, Deming Chen^{2}
1. Babol University of Technology 2. University of Illinois at UrbanaChampaign
VerilogA model of flexible transition metal dichalcogenide fieldeffect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16nm technology node. This model...
http://nanohub.org/publications/134/?v=1

George Kubas
Under Graduate Degree Chemical Engineer at YSUCurrently in PhD. Program for Materials Science
http://nanohub.org/members/99735

GFET Tool
20 May 2011   Contributor(s):: Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene fieldeffect transistor.

Hongsik Jeong
http://nanohub.org/members/108815

Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008   Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...

MuGFET: FirstTime User Guide
28 Apr 2008   Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nanoscale multigate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide selfconsistent solutions to the Poisson and driftdiffusion equation.At the nanometer...

Neel Chatterjee
http://nanohub.org/members/118363

OMEN Nanowire: solve the challenge
05 Feb 2011   Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.