Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
A Z M Nowzesh Hasan
15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
01 Nov 2016 | Online Presentations | Contributor(s): Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node. This model...
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model
08 Feb 2016 | Downloads | Contributor(s): Morteza Gholipour, Ying-Yu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the...
CCAM Compact Carbon Nanotube Field-Effect Transistor Model
06 Oct 2015 | Compact Models | Contributor(s):
By Michael Schroter1, Max Haferlach2, Martin Claus2
1. UCSD 2. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model
30 Aug 2015 | Compact Models | Contributor(s):
By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1
Massachusetts Institute of Technology (MIT)
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible...
how to simulate insulator in a GNRFET with matlab?
Closed | Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
Rajesh kumar R
SPICE Model of Graphene Nanoribbon FETs
12 Jul 2013 | Downloads | Contributor(s): Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
Graphene Nano-Ribbons Field-Effect Transistors HSPICE implementation based on the following two publications:
 Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013)....
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
14 Jul 2011 | Tools | Contributor(s): Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene field-effect transistor.
What simulation for simulating CNTFET as biosensor applications ?
I used simulator such as fettoy and moscnt for device simulation. However, I tried to find a mechanism for utilizing the CNTFET Fettoy as biosensor by relation the permittivity of the Gate...
OMEN Nanowire: solve the challenge
05 Feb 2011 | Teaching Materials | Contributor(s): SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
20 Jan 2010 | Tools | Contributor(s): Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in back-gated CNTFET devices at low field
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
ECE 612 Lecture 26: Heterostructure FETs
0.0 out of 5 stars
10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
2) Heterojunction review,
3) Modulation doping,
4) I-V characteristics,
5) Device Structure / Materials,