
A Z M Nowzesh Hasan
http://nanohub.org/members/183710

15Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel FieldEffect Transistors
01 Nov 2016   Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.

Flexible Transition Metal Dichalcogenide FieldEffect Transistor (TMDFET) Model
07 Apr 2016  Compact Models  Contributor(s):
By Morteza Gholipour^{1}, Deming Chen^{2}
1. Babol University of Technology 2. University of Illinois at UrbanaChampaign
VerilogA model of flexible transition metal dichalcogenide fieldeffect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16nm technology node.
http://nanohub.org/publications/134/?v=1

Flexible Transition Metal Dichalcogenide FieldEffect Transistor (TMDFET) HSPICE Model
08 Feb 2016   Contributor(s):: Morteza Gholipour, YingYu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide fieldeffect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16nm technology node. This model can be used for circuitlevel simulations.

CCAM Compact Carbon Nanotube FieldEffect Transistor Model
06 Oct 2015  Compact Models  Contributor(s):
By Michael Schroter^{1}, Max Haferlach^{2}, Martin Claus^{2}
1. UCSD 2. Technische Universität Dresden
CCAM is a semiphysical carbon nanotube fieldeffect transistor model applicable for digital, analog and high frequency applications.
http://nanohub.org/publications/62/?v=2

Released Resonant Body Transistor with MIT Virtual Source (RBTMVS) Model
30 Aug 2015  Compact Models  Contributor(s):
By Bichoy W. Bahr^{1}, Dana Weinstein^{1}, Luca Daniel^{1}
Massachusetts Institute of Technology (MIT)
An RBT is a microelectromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fullyfeatured spicecompatible...
http://nanohub.org/publications/72/?v=1

how to simulate insulator in a GNRFET with matlab?
Closed  Responses: 0
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
http://nanohub.org/answers/question/1583

Neel Chatterjee
http://nanohub.org/members/118363

Hongsik Jeong
http://nanohub.org/members/108815

Rajesh kumar R
http://nanohub.org/members/105985

George Kubas
Under Graduate Degree Chemical Engineer at YSUCurrently in PhD. Program for Materials Science
http://nanohub.org/members/99735

SPICE Model of Graphene Nanoribbon FETs
12 Jul 2013   Contributor(s):: YingYu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
Graphene NanoRibbons FieldEffect Transistors HSPICE implementation based on the following two publications:[1] YY. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013). A SPICECompatible Model of Graphene NanoRibbon FieldEffect Transistors Enabling CircuitLevel Delay...

Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013   Contributor(s):: Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Nikhil Milind Tiwale
http://nanohub.org/members/72450

GFET Tool
20 May 2011   Contributor(s):: Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene fieldeffect transistor.

What simulation for simulating CNTFET as biosensor applications ?
Closed  Responses: 0
I used simulator such as fettoy and moscnt for device simulation. However, I tried to find a mechanism for utilizing the CNTFET Fettoy as biosensor by relation the permittivity of the Gate...
http://nanohub.org/answers/question/804

OMEN Nanowire: solve the challenge
05 Feb 2011   Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

CNT Mobility
26 Apr 2009   Contributor(s):: Yang Zhao, Albert Liao, Eric Pop
Simulate field effect carrier mobility in backgated CNTFET devices at low field

Akash Paharia
Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...
http://nanohub.org/members/38550

Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009   Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.