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Simulation, design software for VFET, vertical field effect transistor or schottky diodes?
Closed | Responses: 0
Please suggest software, preferably open source and no cost software, to simulate and design VFET.
Please suggest software for schottky diode also.
If possible, please...
Semiconductor & graphene mixtures, printable, for FETs, VFETS?
We tried synthesizing diketopyrroles, and we could not make them.
We have fiddled with P3HT, and we are concerned about its long term compatibility with our ionic liquid...
Need to hire a nanohub freelancer to model a graphene OFET, vertical transistor -- fees MOSFET
I need to hire a freelancer to model and predict a FET.
I am not familiar with FETTOY.
You will use a program like FETTOY to help us optimize the design of a FET...
A Z M Nowzesh Hasan
15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
01 Nov 2016 | | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model
07 Apr 2016 | Compact Models | Contributor(s):
By Morteza Gholipour1, Deming Chen2
1. Babol University of Technology 2. University of Illinois at Urbana-Champaign
Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.
Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model
08 Feb 2016 | | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen
SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.
CCAM Compact Carbon Nanotube Field-Effect Transistor Model
06 Oct 2015 | Compact Models | Contributor(s):
By Michael Schroter1, Max Haferlach2, Martin Claus2
1. UCSD 2. Technische Universität Dresden
CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model
30 Aug 2015 | Compact Models | Contributor(s):
By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1
Massachusetts Institute of Technology (MIT)
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible...
how to simulate insulator in a GNRFET with matlab?
I want to apply gate voltage on a graphene nanoribbon as a channel in a GNRFET. then I want to solve poisson equation but I need to know the voltage on channel as the boundary...
Rajesh kumar R
SPICE Model of Graphene Nanoribbon FETs
12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen
Graphene Nano-Ribbons Field-Effect Transistors HSPICE implementation based on the following two publications: Y-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen (2013). A SPICE-Compatible Model of Graphene Nano-Ribbon Field-Effect Transistors Enabling Circuit-Level Delay...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
Nikhil Milind Tiwale
20 May 2011 | | Contributor(s):: Eric Pop, Feifei Lian
Simulate the electrical and thermal properties of a graphene field-effect transistor.
What simulation for simulating CNTFET as biosensor applications ?
I used simulator such as fettoy and moscnt for device simulation. However, I tried to find a mechanism for utilizing the CNTFET Fettoy as biosensor by relation the permittivity of the Gate...
OMEN Nanowire: solve the challenge
05 Feb 2011 | | Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.