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Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
08 Mar 2019 | | Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.
Contact Resistances in Trigate & FinFET Devices
22 Mar 2016 | | Contributor(s):: Yann-Michel Niquet
IWCE 2015 presentation.
Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | | Contributor(s):: Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are essential....
Quantum and Thermal Effects in Nanoscale Devices
out of 5 stars
18 Sep 2008 | | Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...