nanoHUB.org - Tags: GaAs: resources
http://nanohub.org/tags/
Fri, 22 Aug 2014 16:34:05 -0400HUBzero - The open source platform for scientific and educational collaborationen-gbCopyright 2014 nanoHUB.orgTagsExploring New Channel Materials for Nanoscale CMOS
http://nanohub.org/resources/18738
http://nanohub.org/resources/18738The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics,...]]>3Fri, 28 Jun 2013 13:56:37 -0400Why quantum dot simulation domain must contain multi-million atoms?
http://nanohub.org/resources/16192
http://nanohub.org/resources/16192The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the quantum dots. This imposes a critical constraint on the minimum size of the simulation domain to...]]>1Fri, 11 Jan 2013 23:25:00 -0500DBR Laser Simulator
http://nanohub.org/resources/dbrlaser
http://nanohub.org/resources/dbrlaserGives properties of a Laser such as Power Transmittance, Mirror Reflectivity,Power Spectrum and Loss...]]>7Sat, 08 Sep 2012 15:00:04 -0400Quantitative Modeling and Simulation of Quantum Dots
http://nanohub.org/resources/9332
http://nanohub.org/resources/9332Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be...]]>10Mon, 18 Apr 2011 20:02:54 -0400Quantum Dot Wave Function (Quantum Dot Lab)
http://nanohub.org/resources/10751
http://nanohub.org/resources/10751quantum dot - electron density of an artificial atom Electron density of an artificial atom. Specifically, the animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot. The nanometer-scaled structure of the...]]>5Wed, 02 Feb 2011 08:23:03 -0500Self-Assembled Quantum Dot Structure (pyramid)
http://nanohub.org/resources/10730
http://nanohub.org/resources/10730A pyramidal InAs Quantum dot that is 27 atomic monolayers wide at the base and 15 atomic monolayers tall. This corresponds to 6.5 cubic unit cells width and 3.5 cubic unit cells height, which in turns corresponds to about 3.9 width and 2.1nm height. Typically these quantum dots are about 20nm...]]>5Wed, 02 Feb 2011 07:33:32 -0500Quantum Dot Wave Function (still image)
http://nanohub.org/resources/10692
http://nanohub.org/resources/10692Quantum Dot Wave Function Electron density of an artificial atom. Specifically, the image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot. The nanometer-scaled structure of the semiconductor InAs embedded in...]]>5Mon, 31 Jan 2011 18:10:46 -0500Self-Assembled Quantum Dot Wave Structure
http://nanohub.org/resources/10689
http://nanohub.org/resources/10689Self-Assembled Quantum Dot Wave Structure The semiconductor InAs can be grown as a crystal on top of a GaAs substrate. Since the natural InAs lattice constant is larger than the one of GaAs the material can clump up to form nanoscale, perfect crystal structures that can take on pyramidal...]]>5Mon, 31 Jan 2011 16:51:27 -0500Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
http://nanohub.org/resources/10199
http://nanohub.org/resources/10199At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. NEMO 3-D...]]>1Thu, 16 Dec 2010 19:10:12 -0500Rode\'s Method: Theory and Implementation
http://nanohub.org/resources/9249
http://nanohub.org/resources/9249This set of teaching materials provides theoretical description of the Rode's method for the low field mobility calculation that is accompanied with a MATLAB code for the low field mobility calculation for GaAs material at different temperatures and different doping concentrations. Note that...]]>39Tue, 06 Jul 2010 18:42:00 -0400Negative Differential Resistivity Exercise
http://nanohub.org/resources/9238
http://nanohub.org/resources/9238In certain semiconductors such as GaAs and InP the average velocity as a function of field strength displays a maximum followed by a regime of decreasing velocity. Hilsum, Ridley, and Watkins postulated that peculiarities in the band structure of semiconductors would lead to the above...]]>39Mon, 28 Jun 2010 18:39:54 -0400Bulk Monte Carlo: Implementation Details and Source Codes Download
http://nanohub.org/resources/9109
http://nanohub.org/resources/9109 The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated...]]>39Tue, 01 Jun 2010 21:09:28 -0400Electronic band structure
http://nanohub.org/resources/8814
http://nanohub.org/resources/8814In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is also often called the dispersion or the E(k) relationship. It is a mathematical relationship between...]]>5Mon, 12 Apr 2010 15:01:46 -0400Comparison of PCPBT Lab and Periodic Potential Lab
http://nanohub.org/resources/7201
http://nanohub.org/resources/7201This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from completely two different sets of tools and validate the obtained results. In this presentation we...]]>1Mon, 10 Aug 2009 18:30:54 -0400Bulk Monte Carlo Code Described
http://nanohub.org/resources/4843
http://nanohub.org/resources/4843In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocity-field characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo...]]>39Wed, 02 Jul 2008 16:31:22 -0400